Publications
Hengfang Zhang
(2022)
Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures
Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva
(2022)
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
Journal of Applied Physics, Vol. 131
Continue to DOI
Hengfang Zhang
(2021)
Hot-wall MOCVD of N-polar group-III nitride materials
Dat Tran, Nicholas Blumenschein, Alyssa Mock, Pitsiri Sukkaew, Hengfang Zhang, John F. Muth, Tania Paskova, Plamen Paskov, Vanya Darakchieva
(2020)
Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3
Physica. B, Condensed matter, Vol. 579
Continue to DOI
Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva
(2020)
N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality
Physica. B, Condensed matter, Vol. 580
Continue to DOI