Publikationer
Ding-Yuan Chen, Axel Persson, Vanya Darakchieva, Per O A Persson, Jr-Tai Chen, Niklas Rorsman
(2023)
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Semiconductor Science and Technology, Vol. 38, Artikel 105006
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Axel Persson, Anders Gustafsson, Zhaoxia Bi, Lars Samuelson, Vanya Darakchieva, Per O A Persson
(2023)
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Applied Physics Letters, Vol. 123, Artikel 022103
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Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva
(2023)
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Applied Physics Letters, Vol. 122, Artikel 153501
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Axel Persson, Alexis Papamichail, Vanya Darakchieva, Per O Å Persson
(2022)
Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
Scientific Reports, Vol. 12, Artikel 17987
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Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva
(2022)
Mg-doping and free-hole properties of hot-wall MOCVD GaN
Journal of Applied Physics, Vol. 131, Artikel 185704
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