Publikationer
Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva
(2023)
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Crystal Growth & Design, Vol. 23, s. 1049-1056
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Hengfang Zhang
(2022)
Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures
Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva
(2022)
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
Journal of Applied Physics, Vol. 131
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Hengfang Zhang
(2021)
Hot-wall MOCVD of N-polar group-III nitride materials
Dat Tran, Nicholas Blumenschein, Alyssa Mock, Pitsiri Sukkaew, Hengfang Zhang, John F. Muth, Tania Paskova, Plamen Paskov, Vanya Darakchieva
(2020)
Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3
Physica. B, Condensed matter, Vol. 579
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