Jr-Tai Chen

Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter , Vol. 580

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Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464

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R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58

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R. Y. Khosa, Jr-Tai Chen, K. Pålsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Solid-State Electronics , Vol. 153 , s. 52-58

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Johan Bergsten, Jr-Tai Chen, Sebastian Gustafsson, Anna Malmros, Urban Forsberg, Mattias Thorsell, Erik Janzén, Niklas Rorsman (2016) Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process IEEE Transactions on Electron Devices , Vol. 63 , s. 333-338

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Jr-Tai Chen

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