2022 Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics , Vol. 131 Continue to DOI 2020 Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter , Vol. 580 Continue to DOI 2019 Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Continue to DOI R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Continue to DOI R. Y. Khosa, Jr-Tai Chen, K. Pålsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Solid-State Electronics , Vol. 153 , s. 52-58 Continue to DOI
Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics , Vol. 131 Continue to DOI
Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter , Vol. 580 Continue to DOI
Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Continue to DOI
R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Continue to DOI
R. Y. Khosa, Jr-Tai Chen, K. Pålsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Solid-State Electronics , Vol. 153 , s. 52-58 Continue to DOI