2023 Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, p. 1049-1056 Continue to DOI 2022 Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131 Continue to DOI Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics, Vol. 131 Continue to DOI 2020 Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter, Vol. 580 Continue to DOI 2019 Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018, p. 460-464 Continue to DOI
Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, p. 1049-1056 Continue to DOI
Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131 Continue to DOI
Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics, Vol. 131 Continue to DOI
Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter, Vol. 580 Continue to DOI
Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018, p. 460-464 Continue to DOI