Jr-Tai Chen

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Plamen Paskov, Vanya Darakchieva (2023) High-quality N-polar GaN optimization by multi-step temperature growth process Journal of Crystal Growth, Vol. 603, Artikel 127002

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Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056

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Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131, Artikel 185704

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Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics, Vol. 131

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Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter, Vol. 580

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Jr-Tai Chen

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2023

2022

2020

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Jr-Tai Chen

Presentation

Publikationer

2023

2022

2020

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