Jr-Tai Chen

Publikationer

2023

Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 Vidare till DOI

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Plamen Paskov, Vanya Darakchieva (2023) High-quality N-polar GaN optimization by multi-step temperature growth process Journal of Crystal Growth, Vol. 603, Artikel 127002 Vidare till DOI

Arnar M. Vidarsson, Axel Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul-Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Sveinbjörnsson (2023) Observations of very fast electron traps at SiC/high-κ dielectric interfaces APL Materials, Vol. 11, Artikel 111121 Vidare till DOI

2022

Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131, Artikel 185704 Vidare till DOI

Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics, Vol. 131, Artikel 055701 Vidare till DOI