Jr-Tai Chen

Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056

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Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131

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Hengfang Zhang, Ingemar Persson, Alexis Papamichail, Jr-Tai Chen, Per O A Persson, Plamen Paskov, Vanya Darakchieva (2022) On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Journal of Applied Physics, Vol. 131

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Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter, Vol. 580

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Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018, s. 460-464

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Jr-Tai Chen

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Jr-Tai Chen

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