2020 Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter , Vol. 580 Vidare till DOI 2019 Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Vidare till DOI R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Vidare till DOI R. Y. Khosa, Jr-Tai Chen, K. Pålsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Solid-State Electronics , Vol. 153 , s. 52-58 Vidare till DOI 2016 Johan Bergsten, Jr-Tai Chen, Sebastian Gustafsson, Anna Malmros, Urban Forsberg, Mattias Thorsell, Erik Janzén, Niklas Rorsman (2016) Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process IEEE Transactions on Electron Devices , Vol. 63 , s. 333-338 Vidare till DOI
Hengfang Zhang, Plamen Paskov, Olle Kordina, Jr-Tai Chen, Vanya Darakchieva (2020) N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica. B, Condensed matter , Vol. 580 Vidare till DOI
Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Vidare till DOI
R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Vidare till DOI
R. Y. Khosa, Jr-Tai Chen, K. Pålsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Solid-State Electronics , Vol. 153 , s. 52-58 Vidare till DOI
Johan Bergsten, Jr-Tai Chen, Sebastian Gustafsson, Anna Malmros, Urban Forsberg, Mattias Thorsell, Erik Janzén, Niklas Rorsman (2016) Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process IEEE Transactions on Electron Devices , Vol. 63 , s. 333-338 Vidare till DOI