Photo of Nerijus Armakavicius

Nerijus Armakavicius

Assistant Professor




Nerijus Armakavicius, Sean Robert Knight, Philipp Kuhne, Vallery Stanishev, Dat Tran, Steffen Richter, Alexis Papamichail, Megan Stokey, Preston Sorensen, Ufuk Kilic, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2024) Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect APL Materials, Vol. 12, Article 021114 Continue to DOI


Sean Robert Knight, Steffen Richter, Alexis Papamichail, Philipp Kuhne, Nerijus Armakavicius, Shiqi Guo, Axel R. Persson, Vallery Stanishev, Viktor Rindert, Per O. Å. Persson, Plamen P. Paskov, Mathias Schubert, Vanya Darakchieva (2023) Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42) Journal of Applied Physics, Vol. 134, Article 185701 Continue to DOI
Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Article 112481 Continue to DOI


Philipp Kuhne, Nerijus Armakavicius, Alexis Papamichail, Dat Tran, Vallery Stanishev, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2022) Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect Applied Physics Letters, Vol. 120, Article 253102 Continue to DOI


Vallery Stanishev, Nerijus Armakavicius, Chamseddine Bouhafs, Camilla Coletti, Philipp Kuhne, Ivan Gueorguiev Ivanov, Alexei A. Zakharov, Rositsa Yakimova, Vanya Darakchieva (2021) Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation Applied Sciences, Vol. 11, Article 1891 Continue to DOI