Photo of Nerijus Armakavicius

Nerijus Armakavicius





Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Article 112481 Continue to DOI


Philipp Kuhne, Nerijus Armakavicius, Alexis Papamichail, Dat Tran, Vallery Stanishev, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2022) Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect Applied Physics Letters, Vol. 120, Article 253102 Continue to DOI


Vallery Stanishev, Nerijus Armakavicius, Chamseddine Bouhafs, Camilla Coletti, Philipp Kuhne, Ivan Gueorguiev Ivanov, Alexei A. Zakharov, Rositsa Yakimova, Vanya Darakchieva (2021) Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation Applied Sciences, Vol. 11, Article 1891 Continue to DOI
Nerijus Armakavicius, Philipp Kuhne, Jens Eriksson, Chamseddine Bouhafs, Vallery Stanishev, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Alexei A. Zakharov, Ameer Al-Temimy, Camilla Coletti, Mathias Schubert, Vanya Darakchieva (2021) Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect Carbon, Vol. 172, p. 248-259 Continue to DOI


Ingemar Persson, Nerijus Armakavicius, Chamseddine Bouhafs, Vallery Stanishev, Philipp Kuhne, Tino Hofmann, Mathias Schubert, Johanna Rosén, Rositsa Yakimova, Per O A Persson, Vanya Darakchieva (2020) Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC APL Materials, Vol. 8, Article 011104 Continue to DOI