Rickard Liljedahl

Publications

2015

Valdas Jokubavicius, Gholam Reza Yazdi, Rickard Liljedahl, Ivan Gueorguiev Ivanov, Jianwu Sun, Xinyu Liu, Schuh Philipp, Martin Wilhelm, Peter Wellmann, Rositsa Yakimova, Mikael Syväjärvi (2015) Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates Crystal Growth & Design, Vol. 15, p. 2940-2947 Continue to DOI

2014

Ivan Gueorguiev Ivanov, Milan Yazdanfar, Björn Lundqvist, Jr-Tai Chen, Jawad ul-Hassan, Pontus Stenberg, Rickard Liljedahl, Nguyen Tien Son, Joel W. III Ager, Olle Kordina, Erik Janzén (2014) High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC Silicon Carbide and Related Materials 2013, PTS 1 AND 2, p. 471-474 Continue to DOI

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta K. Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi, Peter Wellmann (2014) The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy IOP Conference Series: Materials Science and Engineering, Vol. 56, p. 012002- Continue to DOI

Valdas Jokubavicius, G. Reza Yazdi, Rickard Liljedahl, Ivan Gueorguiev Ivanov, Rositsa Yakimova, Mikael Syväjärvi (2014) Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates Crystal Growth & Design, Vol. 14, p. 6514-6520 Continue to DOI

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl, Mikael Syväjärvi (2014) Advances in wide bandgap SiC for optoelectronics European Physical Journal B: Condensed Matter Physics, Vol. 87, p. 58- Continue to DOI