Rickard Liljedahl
Research Engineer
Forskningsingenjör
Publications
2015
Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
Crystal Growth & Design, Vol. 15, p. 2940-2947
(Article in journal)
https://dx.doi.org/10.1021/acs.cgd.5b00368
2014
High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
Silicon Carbide and Related Materials 2013, PTS 1 AND 2, p. 471-474
(Conference paper)
https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.471
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
IOP Conference Series: Materials Science and Engineering, Vol. 56, p. 012002-
(Article in journal)
https://dx.doi.org/10.1088/1757-899X/56/1/012002
Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
Crystal Growth & Design, Vol. 14, p. 6514-6520
(Article in journal)
https://dx.doi.org/10.1021/cg501424e
Advances in wide bandgap SiC for optoelectronics
European Physical Journal B: Condensed Matter Physics, Vol. 87, p. 58-
(Article in journal)
https://dx.doi.org/10.1140/epjb/e2014-41100-0