2D electronic materials
Contemporary CMOS technology is stretched to its scaling limits and new materials with superior transport properties are pursued to fuel the increasing demands of high-speed electronics. To address these issues we explore the potential of epitaxial graphene grown on SiC and 2D electronic systems such 2DEG in AlInN/GaN and AlGaN/GaN. We study the electronic, transport and structural properties of graphene and 2D electronic systems and provide feedback to the growth. We explore different substrate polytypes, surface orientations, surface treatments and modifications to establish the mechanisms that control doping and electronic properties in graphene and AlIn(Ga)N/GaN. The research aims at enabling the desired transport and electronic properties in these materials in order to achieve substantial advance towards high-speed and THz-frequency large scale processor technologies.
Research financed by SSF, VR and VINNOVA
Cooperation with Graphensic AB