Carl Hemmingsson

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2025)

Effect of substrate pretreatment on the epitaxial growth of ?-Ga2O3 layers on sapphire by halide vapor phase epitaxy Journal of Crystal Growth, Vol. 668, Article 128289 (Article in journal)

Mattias Jansson, Valentyna Nosenko, Carl Hemmingsson, Galia Pozina, Fumitaro Ishikawa, Weimin Chen, Irina Buyanova (2025)

Passivation of localized states in GaAs/GaNAs core/Shell nanowires by post-growth hydrogenation Journal of Applied Physics, Vol. 137, Article 205703 (Article in journal)

Satoru Yoshioka, Kazuhiro Yasuda, Ching-Lien Hsiao, Chih-Wei Hsu, Weine Olovsson, Jens Birch, Carl Hemmingsson, Galia Pozina (2024)

Local Structure of Zn Dopant in ß-Phase Ga₂O₃ The Journal of Physical Chemistry C, Vol. 128, p. 18879-18885 (Article in journal)

Galia Pozina, Elizaveta I Girshova, Natalia Abrikossova, Carl Hemmingsson, Erkki Lahderanta, Mikhail Kaliteevski (2024)

Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures New Journal of Physics, Vol. 26, Article 053028 (Article in journal)

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2023)

Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides Crystals, Vol. 13, Article 373 (Article in journal)

Publications