Carl Hemmingsson

Publikationer

2023

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2023) Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides Crystals, Vol. 13, Artikel 373 Vidare till DOI

Galia Pozina, Carl Hemmingsson, Natalia Abrikossova, Elizaveta I. Girshova, Erkki Lahderanta, Mikhail A. Kaliteevski (2023) Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires Nanomaterials, Vol. 13, Artikel 1421 Vidare till DOI

2022

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2022) Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing beta-Ga2O3 Layers Crystals, Vol. 12, Artikel 1790 Vidare till DOI

2021

Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson (2021) Doping of beta-Ga2O3 Layers by Zn Using Halide Vapor-Phase Epitaxy Process Physica Status Solidi (a) applications and materials science, Vol. 218, Artikel 2100486 Vidare till DOI

2020

Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Mikhail A. Kaliteevski, Carl Hemmingsson (2020) Development of beta-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor Scientific Reports, Vol. 10, Artikel 22261 Vidare till DOI