Carl Hemmingsson

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2025)

Effect of substrate pretreatment on the epitaxial growth of ?-Ga2O3 layers on sapphire by halide vapor phase epitaxy Journal of Crystal Growth, Vol. 668, Artikel 128289 (Artikel i tidskrift)

Mattias Jansson, Valentyna Nosenko, Carl Hemmingsson, Galia Pozina, Fumitaro Ishikawa, Weimin Chen, Irina Buyanova (2025)

Passivation of localized states in GaAs/GaNAs core/Shell nanowires by post-growth hydrogenation Journal of Applied Physics, Vol. 137, Artikel 205703 (Artikel i tidskrift)

Satoru Yoshioka, Kazuhiro Yasuda, Ching-Lien Hsiao, Chih-Wei Hsu, Weine Olovsson, Jens Birch, Carl Hemmingsson, Galia Pozina (2024)

Local Structure of Zn Dopant in ß-Phase Ga₂O₃ The Journal of Physical Chemistry C, Vol. 128, s. 18879-18885 (Artikel i tidskrift)

Galia Pozina, Elizaveta I Girshova, Natalia Abrikossova, Carl Hemmingsson, Erkki Lahderanta, Mikhail Kaliteevski (2024)

Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures New Journal of Physics, Vol. 26, Artikel 053028 (Artikel i tidskrift)

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2023)

Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides Crystals, Vol. 13, Artikel 373 (Artikel i tidskrift)

Publikationer