Carl Hemmingsson

Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Mikhail A. Kaliteevski, Carl Hemmingsson (2020) Development of beta-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor Scientific Reports , Vol. 10

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Xun Li, Carl Hemmingsson, Urban Forsberg, Erik Janzén, Galia Pozina (2020) Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates Materials letters (General ed.) , Vol. 263

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Galia Pozina, Carl Hemmingsson, Alexei V. Belonovskii, Iaroslav V. Levitskii, Maxim I. Mitrofanov, Elizaveta I. Girshova, Konstantin A. Ivanov, Sergey N. Rodin, Konstantin M. Morozov, Vadim P. Evtikhiev, Mikhail A. Kaliteevski (2020) Emission Properties of GaN Planar Hexagonal Microcavities Physica Status Solidi (a) applications and materials science

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Galia Pozina, Mathias Forsberg, M. A. Kaliteevski, Carl Hemmingsson (2017) Emission properties of Ga2O3 nano-flakes: effect of excitation density Scientific Reports , Vol. 7

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Thien Duc Tran, Galia Pozina, Tien Son Nguyen, Takeshi Ohshima, Erik Janzén, Carl Hemmingsson (2016) Electronic properties of defects in high-fluence electron irradiated bulk GaN Physica status solidi. B, Basic research , Vol. 253 , s. 521-526

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Carl Hemmingsson

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Carl Hemmingsson

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2020

2017

2016

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