Carl Hemmingsson

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2022) Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing beta-Ga2O3 Layers Crystals, Vol. 12, Artikel 1790

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Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson (2021) Doping of beta-Ga2O3 Layers by Zn Using Halide Vapor-Phase Epitaxy Process Physica Status Solidi (a) applications and materials science, Vol. 218

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Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Mikhail A. Kaliteevski, Carl Hemmingsson (2020) Development of beta-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor Scientific Reports, Vol. 10

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Xun Li, Carl Hemmingsson, Urban Forsberg, Erik Janzén, Galia Pozina (2020) Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates Materials letters (General ed.), Vol. 263

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Galia Pozina, Carl Hemmingsson, Alexei V. Belonovskii, Iaroslav V. Levitskii, Maxim I. Mitrofanov, Elizaveta I. Girshova, Konstantin A. Ivanov, Sergey N. Rodin, Konstantin M. Morozov, Vadim P. Evtikhiev, Mikhail A. Kaliteevski (2020) Emission Properties of GaN Planar Hexagonal Microcavities Physica Status Solidi (a) applications and materials science, Vol. 217, Artikel 1900894

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Carl Hemmingsson

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Carl Hemmingsson

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