Photo of Dat Tran

Dat Tran

Assistant Professor

Publications

2026

Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Danial Shafizadeh, Ching-Lien Hsiao, Minho Kim, B. Pecz, A. Kovacs, K. Frey, A. Sulyok, Niraj Kumar Singh, Arnaud Le Febvrier, Per Eklund, Vanya Darakchieva (2026) Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics Advanced Optical Materials (Article in journal) https://dx.doi.org/10.1002/adom.71758
Byeongchan So, Dat Tran, Adamantia Logotheti, Minho Kim, Jovana Malm, Navya Sri Garigapati, Erik Lind, Plamen Paskov, Michal Bockowski, Vanya Darakchieva (2026) Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates Crystal Growth & Design, Vol. 26, p. 1824-1832 (Article in journal) https://dx.doi.org/10.1021/acs.cgd.5c01615
Minho Kim, Dat Tran, Plamen Paskov, Uiho Choi, Okhyun Nam, Vanya Darakchieva (2026) Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs Applied Physics Letters, Vol. 128, Article 042105 (Article in journal) https://dx.doi.org/10.1063/5.0310464

2025

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Article 032104 (Article in journal) https://dx.doi.org/10.1063/5.0282836
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) https://dx.doi.org/10.1016/j.jcrysgro.2024.127971

Research

Organisation