Photo of Dat Tran

Dat Tran

Postdoc

Publications

2026

Minho Kim, Dat Tran, Plamen Paskov, Uiho Choi, Okhyun Nam, Vanya Darakchieva (2026) Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs Applied Physics Letters, Vol. 128, Article 042105 (Article in journal) Continue to DOI

2025

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Article 032104 (Article in journal) Continue to DOI
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Article 182101 (Article in journal) Continue to DOI
Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 (Article in journal) Continue to DOI

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