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Dat Tran

Postdoc

Publications

2025

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Article 182101 (Article in journal) Continue to DOI
Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 (Article in journal) Continue to DOI
Nerijus Armakavicius, Sean Robert Knight, Philipp Kuhne, Vallery Stanishev, Dat Tran, Steffen Richter, Alexis Papamichail, Megan Stokey, Preston Sorensen, Ufuk Kilic, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva (2024) Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect APL Materials, Vol. 12, Article 021114 (Article in journal) Continue to DOI

2023

Dat Tran (2023) Thermal conductivity of wide and ultra-wide bandgap semiconductors

Research

Semiconductor Device Materials

Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.

Organisation

Department of Physics, Chemistry and Biology (IFM)

Undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.

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