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Dat Tran

Postdoc

Publications

2026

Byeongchan So, Dat Tran, Adamantia Logotheti, Minho Kim, Jovana Malm, Navya Sri Garigapati, Erik Lind, Plamen Paskov, Michal Bockowski, Vanya Darakchieva (2026) Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates Crystal Growth & Design, Vol. 26, p. 1824-1832 (Article in journal) Continue to DOI
Minho Kim, Dat Tran, Plamen Paskov, Uiho Choi, Okhyun Nam, Vanya Darakchieva (2026) Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs Applied Physics Letters, Vol. 128, Article 042105 (Article in journal) Continue to DOI

2025

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Article 032104 (Article in journal) Continue to DOI
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Article 182101 (Article in journal) Continue to DOI

Research

Semiconductor Device Materials

Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.

Organisation

Person with transmission electron microscope.

Department of Physics, Chemistry and Biology (IFM)

Excellent undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.

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