2023 Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 Vidare till DOI 2022 Dat Tran, Rosalia Delgado Carrascon, Motoaki Iwaya, Bo Monemar, Vanya Darakchieva, Plamen Paskov (2022) Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers Physical Review Materials, Vol. 6, Artikel 104602 Vidare till DOI Philipp Kuhne, Nerijus Armakavicius, Alexis Papamichail, Dat Tran, Vallery Stanishev, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2022) Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect Applied Physics Letters, Vol. 120 Vidare till DOI Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul-Hassan, Axel R. Persson, Per Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva (2022) Epitaxial growth of β-Ga2O3 by hot-wall MOCVD AIP Advances, Vol. 12, Artikel 055022 Vidare till DOI 2021 Dat Tran, Rosalia Delgado Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov (2021) Correction: Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)] Applied Physics Letters, Vol. 118 Vidare till DOI
Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 Vidare till DOI
Dat Tran, Rosalia Delgado Carrascon, Motoaki Iwaya, Bo Monemar, Vanya Darakchieva, Plamen Paskov (2022) Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers Physical Review Materials, Vol. 6, Artikel 104602 Vidare till DOI
Philipp Kuhne, Nerijus Armakavicius, Alexis Papamichail, Dat Tran, Vallery Stanishev, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2022) Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect Applied Physics Letters, Vol. 120 Vidare till DOI
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul-Hassan, Axel R. Persson, Per Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva (2022) Epitaxial growth of β-Ga2O3 by hot-wall MOCVD AIP Advances, Vol. 12, Artikel 055022 Vidare till DOI
Dat Tran, Rosalia Delgado Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov (2021) Correction: Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)] Applied Physics Letters, Vol. 118 Vidare till DOI
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