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Galia Pozina

Professor

My research interest is focused on the development of semiconductor material systems that can improve the performance of potential applications in electronics and optoelectronics.

Presentation

Publications

2023

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2023) Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides Crystals, Vol. 13, Article 373 Continue to DOI
Galia Pozina, Carl Hemmingsson, Natalia Abrikossova, Elizaveta I. Girshova, Erkki Lahderanta, Mikhail A. Kaliteevski (2023) Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires Nanomaterials, Vol. 13, Article 1421 Continue to DOI

2022

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2022) Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing beta-Ga2O3 Layers Crystals, Vol. 12, Article 1790 Continue to DOI
E. I Girshova, Galia Pozina, A. V Belonovskii, M. I Mitrofanov, I. V Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevski (2022) Enhancement of the Basal-plane Stacking Fault Emission in GaN Planar Nanowire Microcavity JETP Letters: Journal of Experimental And Theoretical Physics Letters, Vol. 115, p. 574-580 Continue to DOI

2021

Alexey V Belonovski, Konstantin M. Morozov, Elizaveta I Girshova, Galia Pozina, Mikhail A. Kaliteevski (2021) Quantum analysis of luminescence of an exciton in a meso-cavity Optics Express, Vol. 29, p. 20724-20734 Continue to DOI

News

Feng Gao

How to build efficient organic solar cells

Twenty-five researchers from seven research institutes have put their heads together to draw up rules for designing high-efficiency organic solar cells. The research, led by associate professor Feng Gao, have been published in Nature Materials.

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