Vallery Stanishev

Principal Research Engineer





Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Article 112481 Continue to DOI
Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2023) Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers Applied Physics Letters, Vol. 122, Article 153501 Continue to DOI


Philipp Kuhne, Nerijus Armakavicius, Alexis Papamichail, Dat Tran, Vallery Stanishev, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2022) Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect Applied Physics Letters, Vol. 120, Article 253102 Continue to DOI
Akchheta Karki, Yu Yamashita, Shangzhi Chen, Tadanori Kurosawa, Jun Takeya, Vallery Stanishev, Vanya Darakchieva, Shun Watanabe, Magnus Jonsson (2022) Doped semiconducting polymer nanoantennas for tunable organic plasmonics Communications Materials, Vol. 3, Article 48 Continue to DOI
Anelia Kakanakova-Georgieva, Alexis Papamichail, Vallery Stanishev, Vanya Darakchieva (2022) Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD Physica status solidi. B, Basic research, Vol. 259, Article 2200137 Continue to DOI