Vallery Stanishev

Publications

2024

Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniela Gogova-Petrova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva (2024) Effective uniaxial dielectric function tensor and optical phonons in (¯2⁢01)-oriented ��-Ga2⁢O3 films with equally distributed sixfold-rotation domains Physical Review Applied, Vol. 22, Article 044003 (Article in journal) Continue to DOI

Alexis Papamichail, Axel Persson, S. Richter, Vallery Stanishev, Nerijus Armakavicius, Philipp Kuhne, S. Guo, Per O A Persson, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2024) Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties Applied Physics Letters, Vol. 125, Article 123505 (Article in journal) Continue to DOI

Nerijus Armakavicius, Philipp Kuhne, Alexis Papamichail, Hengfang Zhang, Sean Robert Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert, Vanya Darakchieva (2024) Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect Materials, Vol. 17, Article 3343 (Article in journal) Continue to DOI

Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga₂O₃(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 (Article in journal) Continue to DOI

Nerijus Armakavicius, Sean Robert Knight, Philipp Kuhne, Vallery Stanishev, Dat Tran, Steffen Richter, Alexis Papamichail, Megan Stokey, Preston Sorensen, Ufuk Kilic, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva (2024) Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect APL Materials, Vol. 12, Article 021114 (Article in journal) Continue to DOI