Photo of Wei-Xin Ni

Wei-Xin Ni

Professor

Professor

Presentation

Publications

2024

Bei Yang, Xiaoke Liu, Li Wan, Wei-Xin Ni, Ni Yang, Jianhui Hou, Feng Gao (2024) The impact of reabsorption effect on composition analysis of organic semiconductors SCIENCE CHINA-MATERIALS (Article in journal) Continue to DOI

2023

Jiajun Qin, Yang Tang, Jia Zhang, Tangyao Shen, Max Karlsson, Tiankai Zhang, Weidong Cai, Lei Shi, Wei-Xin Ni, Feng Gao (2023) From optical pumping to electrical pumping: the threshold overestimation in metal halide perovskites Materials Horizons, Vol. 10, p. 1446-1453 (Article in journal) Continue to DOI

2010

Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz, Wei-Xin Ni (2010) Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy Applied Physics Letters, Vol. 96, p. 181107- (Article in journal) Continue to DOI

2009

Ming Zhao, Göran Hansson, Wei-Xin Ni (2009) Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy JOURNAL OF APPLIED PHYSICS, Vol. 105, p. 063502- (Article in journal) Continue to DOI
Bouchaib Adnane, Fredrik Karlsson, Göran Hansson, Per-Olof Holtz, Wei-Xin Ni (2009) Photoluminescence excitation spectroscopy of self-assembled SiGe/Si quantum dots