Quantum devices of the next generation are expected to actively create, manipulate and read out quantum states of matter. Point defect quantum states in wide band gap semiconductors may realize single photon sources and quantum bits that can be harnessed in quantum information processing and nanoscale sensor applications which may revolutionize the info-communication technology, biological research and therapy. The leading contender is the nitrogen-vacancy center in diamond which may be considered as a robust quantum tool. However, possibility to realize bright single-photon emitters, and single spin sources (single defects with spin) in SiC have been demonstrated, and other materials, e.g. III-nitrides (BN, GaN, AlN) are attracting increasing interest. Researchers face many materials science problems in fabricating point defect quantum states with favourable intrinsic properties that can be perturbed by other defects either in bulk or at the surface of the devices. Theoretical simulations have been demonstrated as highly useful tool in understanding the underlying physics of these atomic scale systems as well as in identification of potential new quantum bits and single photon emitters in wide band gap semiconductors. Therefore, tight collaboration of experimental and atomistic simulation researchers is essential for a rapid progress in the field.
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