Hsu Chih-Wei

Principal Research Engineer

Publications

2025

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2025)

Effect of substrate pretreatment on the epitaxial growth of ?-Ga2O3 layers on sapphire by halide vapor phase epitaxy Journal of Crystal Growth, Vol. 668, Article 128289 (Article in journal)

https://dx.doi.org/10.1016/j.jcrysgro.2025.128289

2024

Satoru Yoshioka, Kazuhiro Yasuda, Ching-Lien Hsiao, Chih-Wei Hsu, Weine Olovsson, Jens Birch, Carl Hemmingsson, Galia Pozina (2024)

Local Structure of Zn Dopant in ß-Phase Ga₂O₃ The Journal of Physical Chemistry C, Vol. 128, p. 18879-18885 (Article in journal)

https://dx.doi.org/10.1021/acs.jpcc.4c05657

2023

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2023)

Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides Crystals, Vol. 13, Article 373 (Article in journal)

https://dx.doi.org/10.3390/cryst13030373

Henrik Pedersen, Hsu Chih-Wei, Neeraj Nepal, Jefferey M. Woodward, Charles R. Eddy (2023)

Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys Crystal Growth & Design, Vol. 23, p. 7010-7025 (Article in journal)

https://dx.doi.org/10.1021/acs.cgd.3c00775

2022

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2022)

Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing beta-Ga2O3 Layers Crystals, Vol. 12, Article 1790 (Article in journal)

https://dx.doi.org/10.3390/cryst12121790

News

Nathan O'Brien at the glove box in which the sensitive molecules are protected from air and moisture during synthesis.

Chemistry paves the way for improved electronic materials

Indium nitride is a promising material, but difficult to manufacture. Scientists at LiU have developed a new molecule that can be used to create high-quality indium nitride, making it possible to use it in high-frequency electronics.