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Daniela Gogova

Principal Research Engineer

Publications

2024

Patrik Scajev, Daniela Gogova-Petrova (2024) Long-lived excitons in thermally annealed hydrothermal ZnO Heliyon, Vol. 10, Article e26049 Continue to DOI
Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 Continue to DOI

2023

Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Article 112481 Continue to DOI

2022

A. Bafekry, M. Naseri, M. Faraji, M. M. Fadlallah, D. M. Hoat, H. R. Jappor, M. Ghergherehchi, Daniela Gogova-Petrova, H. Afarideh (2022) Theoretical prediction of two-dimensional BC2X (X = N, P, As) monolayers: ab initio investigations Scientific Reports, Vol. 12, Article 22269 Continue to DOI
Mohamed M. Fadlallah, Daniela Gogova-Petrova (2022) Theoretical study on electronic, optical, magnetic and photocatalytic properties of codoped SrTiO3 for green energy application MICRO AND NANOSTRUCTURES, Vol. 168, Article 207302 Continue to DOI

Research

Semiconductor Device Materials

Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.

Organisation

A light-green thin sheet is immersed in water.

Semiconductor Materials (HALV)

Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene.

Department of Physics, Chemistry and Biology (IFM)

Undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.

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