Photo of Jawad Ul-Hassan

Jawad Ul-Hassan

Associate Professor

Publications

2025

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Huttmann, Di Liu, Rainer Stohr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Gali Adam, Vadim Vorobyov, Joerg Wrachtrup (2025) Single V2 defect in 4H silicon carbide Schottky diode at low temperature Nature Communications, Vol. 16, Article 4669 (Article in journal) Continue to DOI
Misagh Ghezellou, Jawad Ul-Hassan (2025) The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers Journal of Crystal Growth, Vol. 661, Article 128165 (Article in journal) Continue to DOI
Misagh Ghezellou, Erlend Lemva Ousdal, Marianne Etzelmüller Bathen, Lasse Vines, Jawad ul-Hassan (2025) Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers Journal of Physics: Materials, Vol. 8, Article 025008 (Article in journal) Continue to DOI

2024

Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniela Gogova-Petrova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva (2024) Effective uniaxial dielectric function tensor and optical phonons in (¯2⁢01)-oriented ��-Ga2⁢O3 films with equally distributed sixfold-rotation domains Physical Review Applied, Vol. 22, Article 044003 (Article in journal) Continue to DOI
Erik Hesselmeier, Pierre Kuna, Wolfgang Knolle, Florian Kaiser, Son Tien Nguyen, Misagh Ghezellou, Jawad Ul-Hassan, Vadim Vorobyov, Jorg Wrachtrup (2024) High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide Physical Review Letters, Vol. 132, Article 180804 (Article in journal) Continue to DOI

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