Fotografi av Jawad Ul-Hassan

Jawad Ul-Hassan

Universitetslektor

Publikationer

2025

Erlend Lemva Ousdal, Misagh Ghezellou, Jawad Ul-Hassan, Andrej Kuznetsov, Lasse Vines, Marianne Etzelmuller Bathen (2025) Identification of electrically active defects in 6H-SiC Physical Review Materials, Vol. 9, Artikel 124601 (Artikel i tidskrift) Vidare till DOI
Issam Belgacem, Pasquale Cilibrizzi, Muhammad Junaid Arshad, Daniel White, Malte Kroj, Christiaan Bekker, Margherita Mazzera, Brian D. Gerardot, Angelo C. Frangeskou, Gavin W. Morley, Son Tien Nguyen, Jawad Ul-Hassan, Takeshi Ohshima, Hiroshi Abe, Lorenzo Vinco, Dario Polli, Giulio Cerullo, Cristian Bonato (2025) Broadband Fourier transform spectroscopy of quantum emitters photoluminescence with sub-nanosecond temporal resolution OPTICA QUANTUM, Vol. 3, s. 335-345 (Artikel i tidskrift) Vidare till DOI
Jannis Hessenauer, Jonathan Koerber, Misagh Ghezellou, Jawad Ul-Hassan, Georgy V. Astakhov, Wolfgang Knolle, Joerg Wrachtrup, David Hunger (2025) Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Perot microcavity OPTICA QUANTUM, Vol. 3, s. 175-181 (Artikel i tidskrift) Vidare till DOI
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Huttmann, Di Liu, Rainer Stohr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Gali Adam, Vadim Vorobyov, Joerg Wrachtrup (2025) Single V2 defect in 4H silicon carbide Schottky diode at low temperature Nature Communications, Vol. 16, Artikel 4669 (Artikel i tidskrift) Vidare till DOI
Misagh Ghezellou, Jawad Ul-Hassan (2025) The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers Journal of Crystal Growth, Vol. 661, Artikel 128165 (Artikel i tidskrift) Vidare till DOI

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