Photo of Joel Davidsson

Joel Davidsson

Postdoc

My research focuses on point defects in semiconductors for quantum technologies.

Presentation

I am searching for point defects with suitable properties for quantum applications. To this end, I use high-throughput first-principles calculations.

Point defects in semiconductors are excellent for quantum technologies such as single-photon emitters and qubits. Qubits are used in quantum computers to perform specific computations orders of magnitude faster than classical computers. However, only a few point defect systems are currently being studied and used, as identifying a point defect is a time-consuming and data-intensive process. The space of possible point defects in various host materials is vast!

My research aims to find suitable point defects for quantum applications.

I use high-throughput first-principles calculations based on density functional theory to achieve this, specifically as the main developer of ADAQ (Automatic Defect Analysis and Qualification), a software platform for automatic workflows for high-throughput calculations of point defects in semiconductors. Using this software, we have created a database of the most relevant defect properties. I also lead the ADAQ Database Initiative, which continuously releases the calculated data through an online web interface. Access the ADAQ defect database to explore point defects in various host materials. We have identified and predicted several interesting defects; see publications for more details.

Google Scholar ID: OKMA6DcAAAAJ

 

Publications

2024

Oscar Bulancea Lindvall, Joel Davidsson, Ivan Gueorguiev Ivanov, Adam Gali, Viktor Ivády, Rickard Armiento, Igor Abrikosov (2024) Temperature dependence of the AB lines and optical properties of the carbon-antisite-vacancy pair in 4⁢��−Si⁢C Physical Review Applied, Vol. 22, Article 034056 (Article in journal) Continue to DOI
Oscar Bulancea-Lindvall, Joel Davidsson, Ivan G. Ivanov, Adam Gali, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov (2024) Temperature dependence of the AB lines and optical properties of the carbon--antisite-vacancy pair in 4H-SiC Physical Review Applied, Vol. 22, Article 034056 (Article in journal) Continue to DOI
Joel Davidsson, Mykyta Onizhuk, Christian Vorwerk, Giulia Galli (2024) Discovery of atomic clock-like spin defects in simple oxides from first principles Nature Communications, Vol. 15, Article 4812 (Article in journal) Continue to DOI
Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Igor Abrikosov, Son Tien Nguyen, Ivan Gueorguiev Ivanov (2024) Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Physical Review B, Vol. 109, Article 235203 (Article in journal) Continue to DOI
Joel Davidsson, William Stenlund, Abhijith S Parackal, Rickard Armiento, Igor Abrikosov (2024) Na in diamond: high spin defects revealed by the ADAQ high-throughput computational database npj Computational Materials, Vol. 10, Article 109 (Article in journal) Continue to DOI

Master and doctoral theses