Misagh Ghezellou

Its high thermal conductivity, wide bandgap, and superior electrical characteristics enable the creation of efficient, high-power devices that can operate under extreme conditions. This has led to advancements in electric vehicles, renewable energy systems, and aerospace applications. Simultaneously, SiC's unique quantum properties hold immense promise for quantum technology applications. With the ability to host stable quantum states and emit photons with remarkable efficiency, SiC emerges as a potential platform for quantum communication and computing. As research and innovation continue to unfold, the convergence of SiC's prowess in power electronics and its nascent role in quantum technology paints a compelling trajectory for the future of both fields.

Misagh is highly active in the epitaxial growth of silicon carbide (SiC) for both power electronics and quantum applications. His research centers around enhancing the properties of 4H-SiC epitaxial layers through chemical vapor deposition (CVD) techniques. Within the realm of power devices, Misagh focuses on optimizing thick and ultra-thick 4H-SiC layers for bipolar devices. His work includes improving minority carrier lifetime, exploring the growth of epitaxial layers on different substrate orientations, and pioneering novel approaches to post-growth treatments.

Additionally, Misagh's contributions extend to quantum technologies, where he aims to elevate material quality to a quantum-grade level, enabling an ultra-high signal-to-noise ratio from SiC-hosted quantum emitters. He also delves into isotopically pure SiC epitaxial layers with precise doping concentrations and thicknesses (down to a few tens of nanometers), advancing quantum capabilities. He is also involved in industrial projects showcasing his commitment to pushing SiC technology boundaries.