Per Sandström
Associate Professor
Publications
2024
Katrin Pingen, Niklas Wolff, Zahra Mohammadian, Pär Sandström, Susanne Beuer, Elizabeth von Hauff, Lorenz Kienle, Lars Hultman, Jens Birch, Ching-Lien Hsiao, Alexander M. Hinz
(2024)
III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers
ACS Applied Materials and Interfaces, Vol. 16, p. 34294-34302
(Article in journal)
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Yi-Ling Lo, Aditya Prabaswara, Jui-Che Chang, Samiran Bairagi, Igor Zhirkov, Per Sandström, Johanna Rosén, Kenneth Järrendahl, Lars Hultman, Jens Birch, Ching-Lien Hsiao
(2024)
Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy
Materials Science in Semiconductor Processing, Vol. 176, Article 108292
(Article in journal)
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Katrin Pingen, Alexander M. Hinz, Per Sandström, Niklas Wolff, Lorenz Kienle, Larry Scipioni, James Greer, Elizabeth von Hauff, Lars Hultman, Jens Birch, Ching-Lien Hsiao
(2024)
High growth rate magnetron sputter epitaxy of GaN using a solid Ga target
Vacuum, Vol. 220, Article 112852
(Article in journal)
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2023
2022
Jui-Che Chang, Jens Birch, Gueorgui Kostov Gueorguiev, Babak Bakhit, Grzegorz Greczynski, Fredrik Eriksson, Per Sandström, Lars Hultman, Ching-Lien Hsiao
(2022)
Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate
Surface & Coatings Technology, Vol. 443, Article 128581
(Article in journal)
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