Per Sandström
Universitetslektor
Publikationer
2025
Samira Dorri, Olle Nyqvist, Justinas Palisaitis, Alexei Vorobiev, Anton Devishvili, Pär Sandström, Per O.Å. Persson, Naureen Ghafoor, Fredrik Eriksson, Jens Birch
(2025)
Artificial superlattices with abrupt interfaces by monolayer-controlled growth kinetics during magnetron sputter epitaxy, case of hexagonal CrB2/TiB2 heterostructures
Materials & design, Vol. 251, Artikel 113661
(Artikel i tidskrift)
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2024
Katrin Pingen, Niklas Wolff, Zahra Mohammadian, Per Sandström, Susanne Beuer, Elizabeth von Hauff, Lorenz Kienle, Lars Hultman, Jens Birch, Ching-Lien Hsiao, Alexander M. Hinz
(2024)
III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers
ACS Applied Materials and Interfaces, Vol. 16, s. 34294-34302
(Artikel i tidskrift)
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Yi-Ling Lo, Aditya Prabaswara, Jui-Che Chang, Samiran Bairagi, Igor Zhirkov, Per Sandström, Johanna Rosén, Kenneth Järrendahl, Lars Hultman, Jens Birch, Ching-Lien Hsiao
(2024)
Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy
Materials Science in Semiconductor Processing, Vol. 176, Artikel 108292
(Artikel i tidskrift)
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Katrin Pingen, Alexander M. Hinz, Per Sandström, Niklas Wolff, Lorenz Kienle, Larry Scipioni, James Greer, Elizabeth von Hauff, Lars Hultman, Jens Birch, Ching-Lien Hsiao
(2024)
High growth rate magnetron sputter epitaxy of GaN using a solid Ga target
Vacuum, Vol. 220, Artikel 112852
(Artikel i tidskrift)
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2023