Valdas Jokubavicius

Publications

2024

Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga₂O₃(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 Continue to DOI

2022

F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco, F. Giannazzo, F. La Via, M. Zielinski, H. Mank, Valdas Jokubavicius, Rositsa Yakimova (2022) Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) Applied Surface Science, Vol. 606, Article 154896 Continue to DOI

2021

Francesco La Via, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Emilio Scalise, Anna Marzegalli, Andrey Sarikov, Leo Miglio, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Philipp Schuh, Michael Scholer, Manuel Kollmuss, Peter Wellmann (2021) New Approaches and Understandings in the Growth of Cubic Silicon Carbide Materials, Vol. 14, Article 5348 Continue to DOI

Jingxin Jian, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun (2021) Nanoporous Cubic Silicon Carbide Photoanodes for Enhanced Solar Water Splitting ACS Nano, Vol. 15, p. 5502-5512 Continue to DOI

2019

Abebe T. Tarekegne, K. Norrman, Valdas Jokubavicius, Mikael Syväjärvi, P. Schuh, P. Wellmann, H. Ou (2019) Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al-N co-doped SiC Applied physics. B, Lasers and optics (Print), Vol. 125, Article 172 Continue to DOI