Valdas Jokubavicius
Förste forskningsingenjör
Doktorand
Publikationer
2026
Vanadium photoluminescence in 3C-SiC
Physical Review B, Vol. 113, Artikel 075201
(Artikel i tidskrift)
https://dx.doi.org/10.1103/nv8v-gwlv
2024
Aging Ni(OH)2 on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline Solutions
ACS Applied Materials and Interfaces, Vol. 16, s. 50926-50936
(Artikel i tidskrift)
https://dx.doi.org/10.1021/acsami.4c11809
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Artikel 022708
(Artikel i tidskrift)
https://dx.doi.org/10.1116/6.0003424
2022
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
Applied Surface Science, Vol. 606, Artikel 154896
(Artikel i tidskrift)
https://dx.doi.org/10.1016/j.apsusc.2022.154896
2021
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
Materials, Vol. 14, Artikel 5348
(Artikel, forskningsöversikt)
https://dx.doi.org/10.3390/ma14185348