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This article represents the first step towards development of room temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.

In this paper, we show how a spin current can be injected from a conventional semiconductor, such as GaAs, to a topological insulator, Bi2Te3.

We report on the first successful growth of wurtzite (WZ) GaBiAs nanowires (NWs) and reveal the effects of Bi incorporation on the electronic band structure by using polarization-resolved optical spectroscopies performed on individual NWs.

In this work, we demonstrate highly efficient second-harmonic generation in subwavelength wurtzite (WZ) GaAs NWs, reaching 2.5x10-5 W-1 that is about 7 times higher than that of their zincblende counterpart.

We demonstrate high optical polarization inferring high electron spin polarization at room temperature in a 1D system.

A discovery on how to control spinning electrons paves the way for novel hybrid devices that could outperform existing semiconductor electronics. Researchers at LiU use a topological insulator, a fascinating matter with unique electrical properties.

In the Functional Electronic Materials group, we conduct scientific research on various state-of-the-art materials.

In this paper by Mattias Jansson and collaborators, they demonstrate how a semiconductor nanowire can efficiently absorb low energy light and convert it to light of a higher energy, a process which is called energy upconversion.

In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5% nitrogen.

In this study, Mattias Jansson and collaborators have investigated how the localization of excitons in tiny lasers fabricated in so-called nanowire structures can affect their performance.