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Efficient lasers at the nanoscale 

Mattias Jansson, Valentyna V. Nosenko, Yuto Torigoe, Kaito Nakama, Mitsuki Yukimune, Akio Higo, Fumitaro Ishikawa, Weimin M. Chen and Irina A. Buyanova

Published open access in ACS Nano.

Chart of SHG/SFG wavelength och Nanowire lasing wavelength

The dynamics of charge carriers (electrons and holes) and excitons are crucially important in the performance of semiconductor devices. In this study, Mattias Jansson and collaborators have investigated how the localization of excitons in tiny lasers fabricated in so-called nanowire structures can affect their performance. Using these findings, they have demonstrated an improved nanowire fabrication process, which significantly improves vital metrics of the nanolasers, such as the lasing threshold and maximum operation temperature.

Though the investigated nanowires fabricated of the GaNAs alloy has a band-to-band related emission in the near-infrared spectral region, the researchers have shown that the nanolasers can also emit coherent light in the cyan spectral range. This multi-wavelength lasing behavior can substantially extend the operational wavelength region of the nanolaser.

More about the research

Functional electronic materials

In the Functional Electronic Materials group, we conduct scientific research on various state-of-the-art materials.
upcycling of light at the nanoscale

Upcycling of light at the nanoscale

In this paper by Mattias Jansson and collaborators, they demonstrate how a semiconductor nanowire can efficiently absorb low energy light and convert it to light of a higher energy, a process which is called energy upconversion.
transparent image, place holder

Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator

In this paper, we show how a spin current can be injected from a conventional semiconductor, such as GaAs, to a topological insulator, Bi2Te3.

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