Photo of Ivan Gueorguiev Ivanov

Ivan Gueorguiev Ivanov

Senior Associate Professor, Head of Division, Head of Unit

Publications

2026

Danial Shafizadeh, Valdas Jokubavicius, Koichi Murata, Hidekazu Tsuchida, Peter Udvarhelyi, Guodong Bian, Oliver Lang, Merve Karaman, Diego Haya Enriquez, Moritz Brehm, Thomas Fromherz, Michael Trupke, Jianwu Sun, Rositsa Yakimova, Igor Abrikosov, Son Tien Nguyen, Adam Gali, Ivan Gueorguiev Ivanov (2026) Vanadium photoluminescence in 3C-SiC Physical Review B, Vol. 113, Article 075201 (Article in journal) https://dx.doi.org/10.1103/nv8v-gwlv

2025

Son Tien Nguyen, Ivan Gueorguiev Ivanov (2025) Defect engineering and charge state control of color centers in silicon carbide Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies, p. 277-299 (Chapter in book) https://dx.doi.org/10.1016/B978-0-443-13717-4.00015-3
Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Son Tien Nguyen, Ivan Gueorguiev Ivanov (2025) Comparative study of divacancies in 3C-, 4H-, and 6H-SiC Applied Physics Letters, Vol. 127, Article 054003 (Article in journal) https://dx.doi.org/10.1063/5.0266909
Hui Zeng, Satoru Yoshioka, Weimin Wang, Zhongyuan Han, Ivan Gueorguiev Ivanov, Hongwei Liang, Vanya Darakchieva, Jianwu Sun (2025) Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water Splitting Journal of the American Chemical Society, Vol. 147, p. 14815-14823 (Article in journal) https://dx.doi.org/10.1021/jacs.5c04005
Danial Shafizadeh, Son Tien Nguyen, Igor Abrikosov, Ivan Gueorguiev Ivanov (2025) Evolution of the optically detected magnetic resonance spectra of divacancies in 4H-SiC from liquid-helium to room temperature Physical Review B, Vol. 111, Article 165201 (Article in journal) https://dx.doi.org/10.1103/PhysRevB.111.165201

Research

Organisation