Wide bandgap semiconductors

Green laser

We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.

These are basic elements required for various applications in quantum technologies, e.g. long-distance quantum communications, quantum sensing and quantum computing. Our expertise extends from materials science, which includes design and growth of quantum-grade materials (SiC, III-nitrides and other semiconductors) and structures for nanophotonic and other quantum devices, to characterization, control and manipulation of optical spin qubits.

We also develop MOCVD of group III nitrides, particularly ultra-wide bandgap AlN, and resolve doping issues. We further develop group III nitrides at the 2D limit by leading predictive theoretical modeling and MOCVD approaches and explore new material performance for electronics at nanoscale.




Jonah Heiler, Jonathan Koerber, Erik Hesselmeier, Pierre Kuna, Rainer Stoehr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle, Christoph Becher, Florian Kaiser, Joerg Wrachtrup (2024) Spectral stability of V2 centres in sub-micron 4H-SiC membranes NPJ QUANTUM MATERIALS, Vol. 9, Article 34 Continue to DOI
Erik Hesselmeier, Pierre Kuna, István Takács, Viktor Ivády, Wolfgang Knolle, Son Tien Nguyen, Misagh Ghezellou, Jawad ul-Hassan, Durga Dasari, Florian Kaiser, Vadim Vorobyov, Jörg Wrachtrup (2024) Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide Physical Review Letters, Vol. 132, Article 090601 Continue to DOI
Misagh Ghezellou, Jawad ul-Hassan (2024) Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers Physica status solidi. B, Basic research Continue to DOI
Edward Ferraz de Almeida Jr, Anelia Kakanakova-Gueorguieva, Gueorgui Kostov Gueorguiev (2024) On Decorating a Honeycomb AlN Monolayer with Hydrogen and Fluorine Atoms: Ab Initio and Experimental Aspects Materials, Vol. 17, Article 616 Continue to DOI


Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot, Son Tien Nguyen, Ivan Gueorguiev Ivanov, Thomas Astner, Philipp Koller, Misagh Ghezellou, Jawad Ul-Hassan, Daniel White, Christiaan Bekker, Guido Burkard, Michael Trupke, Cristian Bonato (2023) Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide Nature Communications, Vol. 14, Article 8448 Continue to DOI
Daniil M. Lukin, Melissa A. Guidry, Joshua Yang, Misagh Ghezellou, Sattwik Deb Mishra, Hiroshi Abe, Takeshi Ohshima, Jawad ul-Hassan, Jelena Vučković (2023) Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics Physical Review X, Vol. 13, Article 011005 Continue to DOI
Wisam Alshebly, Majid Shalchian, Danial Shafizadeh, Amirali Chalechale, Farzan Jazaeri (2023) Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement Solid-State Electronics, Vol. 200, Article 108544 Continue to DOI
Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Sveinbjörnsson, Ulrike Grossner, Peder Bergman, Lasse Vines, Jawad ul-Hassan (2023) The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers APL Materials, Vol. 11, Article 031107 Continue to DOI
Jing-Jia Huang, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, Henrik Pedersen (2023) Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 41, Article 030403 Continue to DOI
Svante Gunnarsson, Urban Forsberg, Daniel Axehill (2023) Reflections about reflections Proceedings of the 19th CDIO International Conference, p. 56-66