Wide bandgap semiconductors

Green laser

We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.

These are basic elements required for various applications in quantum technologies, e.g. long-distance quantum communications, quantum sensing and quantum computing. Our expertise extends from materials science, which includes design and growth of quantum-grade materials (SiC, III-nitrides and other semiconductors) and structures for nanophotonic and other quantum devices, to characterization, control and manipulation of optical spin qubits.

We also develop MOCVD of group III nitrides, particularly ultra-wide bandgap AlN, and resolve doping issues. We further develop group III nitrides at the 2D limit by leading predictive theoretical modeling and MOCVD approaches and explore new material performance for electronics at nanoscale.

Publications

2025

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Huttmann, Di Liu, Rainer Stohr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Gali Adam, Vadim Vorobyov, Joerg Wrachtrup (2025) Single V2 defect in 4H silicon carbide Schottky diode at low temperature Nature Communications, Vol. 16, Article 4669 (Article in journal) Continue to DOI
Mattias Jansson, Valentyna Nosenko, Carl Hemmingsson, Galia Pozina, Fumitaro Ishikawa, Weimin Chen, Irina Buyanova (2025) Passivation of localized states in GaAs/GaNAs core/Shell nanowires by post-growth hydrogenation Journal of Applied Physics, Vol. 137, Article 205703 (Article in journal) Continue to DOI
Danial Shafizadeh (2025) Color Centers in Silicon Carbide for Quantum Technologies
Hui Zeng, Satoru Yoshioka, Weimin Wang, Zhongyuan Han, Ivan Gueorguiev Ivanov, Hongwei Liang, Vanya Darakchieva, Jianwu Sun (2025) Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water Splitting Journal of the American Chemical Society, Vol. 147, p. 14815-14823 (Article in journal) Continue to DOI
Danial Shafizadeh, Son Tien Nguyen, Igor Abrikosov, Ivan Gueorguiev Ivanov (2025) Evolution of the optically detected magnetic resonance spectra of divacancies in 4H-SiC from liquid-helium to room temperature Physical Review B, Vol. 111, Article 165201 (Article in journal) Continue to DOI
Misagh Ghezellou, Jawad Ul-Hassan (2025) The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers Journal of Crystal Growth, Vol. 661, Article 128165 (Article in journal) Continue to DOI
Misagh Ghezellou, Erlend Lemva Ousdal, Marianne Etzelmüller Bathen, Lasse Vines, Jawad ul-Hassan (2025) Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers Journal of Physics: Materials, Vol. 8, Article 025008 (Article in journal) Continue to DOI
Misagh Ghezellou (2025) Epitaxial Growth of SiC via CVD for Power Electronics and Quantum Applications

2024

Satoru Yoshioka, Kazuhiro Yasuda, Ching-Lien Hsiao, Chih-Wei Hsu, Weine Olovsson, Jens Birch, Carl Hemmingsson, Galia Pozina (2024) Local Structure of Zn Dopant in ß-Phase Ga2O3 The Journal of Physical Chemistry C (Article in journal) Continue to DOI
Hui Zeng, Weimin Wang, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Jianwu Sun (2024) Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction Applied Physics Letters, Vol. 125, Article 162102 (Article in journal) Continue to DOI

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