Wide bandgap semiconductors

Green laser

We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.

These are basic elements required for various applications in quantum technologies, e.g. long-distance quantum communications, quantum sensing and quantum computing. Our expertise extends from materials science, which includes design and growth of quantum-grade materials (SiC, III-nitrides and other semiconductors) and structures for nanophotonic and other quantum devices, to characterization, control and manipulation of optical spin qubits.

We also develop MOCVD of group III nitrides, particularly ultra-wide bandgap AlN, and resolve doping issues. We further develop group III nitrides at the 2D limit by leading predictive theoretical modeling and MOCVD approaches and explore new material performance for electronics at nanoscale.

Publications

2025

Danial Shafizadeh (2025) Color Centers in Silicon Carbide for Quantum Technologies
Hui Zeng, Satoru Yoshioka, Weimin Wang, Zhongyuan Han, Ivan Gueorguiev Ivanov, Hongwei Liang, Vanya Darakchieva, Jianwu Sun (2025) Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water Splitting Journal of the American Chemical Society, Vol. 147, p. 14815-14823 (Article in journal) Continue to DOI
Danial Shafizadeh, Son Tien Nguyen, Igor Abrikosov, Ivan Gueorguiev Ivanov (2025) Evolution of the optically detected magnetic resonance spectra of divacancies in 4H-SiC from liquid-helium to room temperature Physical Review B, Vol. 111, Article 165201 (Article in journal) Continue to DOI
Misagh Ghezellou, Jawad Ul-Hassan (2025) The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers Journal of Crystal Growth, Vol. 661, Article 128165 (Article in journal) Continue to DOI
Misagh Ghezellou, Erlend Lemva Ousdal, Marianne Etzelmüller Bathen, Lasse Vines, Jawad ul-Hassan (2025) Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers Journal of Physics: Materials, Vol. 8, Article 025008 (Article in journal) Continue to DOI
Misagh Ghezellou (2025) Epitaxial Growth of SiC via CVD for Power Electronics and Quantum Applications

2024

Satoru Yoshioka, Kazuhiro Yasuda, Ching-Lien Hsiao, Chih-Wei Hsu, Weine Olovsson, Jens Birch, Carl Hemmingsson, Galia Pozina (2024) Local Structure of Zn Dopant in ß-Phase Ga2O3 The Journal of Physical Chemistry C (Article in journal) Continue to DOI
Hui Zeng, Weimin Wang, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Jianwu Sun (2024) Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction Applied Physics Letters, Vol. 125, Article 162102 (Article in journal) Continue to DOI
Oscar Bulancea Lindvall, Joel Davidsson, Ivan Gueorguiev Ivanov, Adam Gali, Viktor Ivády, Rickard Armiento, Igor Abrikosov (2024) Temperature dependence of the AB lines and optical properties of the carbon-antisite-vacancy pair in 4⁢��−Si⁢C Physical Review Applied, Vol. 22, Article 034056 (Article in journal) Continue to DOI
Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniela Gogova-Petrova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva (2024) Effective uniaxial dielectric function tensor and optical phonons in (¯2⁢01)-oriented ��-Ga2⁢O3 films with equally distributed sixfold-rotation domains Physical Review Applied, Vol. 22, Article 044003 (Article in journal) Continue to DOI

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