Wide bandgap semiconductors

Green laser

We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.

These are basic elements required for various applications in quantum technologies, e.g. long-distance quantum communications, quantum sensing and quantum computing. Our expertise extends from materials science, which includes design and growth of quantum-grade materials (SiC, III-nitrides and other semiconductors) and structures for nanophotonic and other quantum devices, to characterization, control and manipulation of optical spin qubits.

We also develop MOCVD of group III nitrides, particularly ultra-wide bandgap AlN, and resolve doping issues. We further develop group III nitrides at the 2D limit by leading predictive theoretical modeling and MOCVD approaches and explore new material performance for electronics at nanoscale.

 

Publications

2024

Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Igor Abrikosov, Son Tien Nguyen, Ivan Gueorguiev Ivanov (2024) Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Physical Review B, Vol. 109, Article 235203 Continue to DOI
Galia Pozina, Elizaveta I Girshova, Natalia Abrikossova, Carl Hemmingsson, Erkki Lahderanta, Mikhail Kaliteevski (2024) Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures New Journal of Physics, Vol. 26, Article 053028 Continue to DOI
Thomas Astner, Philipp Koller, Carmem M. Gilardoni, Joop Hendriks, Nguyen Tien Son, Ivan Gueorguiev Ivanov, Jawad Ul-Hassan, Caspar H. van der Wal, Michael Trupke (2024) Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions QUANTUM SCIENCE AND TECHNOLOGY, Vol. 9, Article 035038 Continue to DOI
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis, Arthur Bouamra, Lukas Niechziol, Timo Steidl, Ruoming Peng, Jonathan Koerber, Rainer Stoehr, Nils Gross, Jurgen H. Smet, Jawad Ul-Hassan, Peter Udvarhelyi, Adam Gali, Florian Kaiser, Joerg Wrachtrup (2024) Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide ACS Photonics Continue to DOI
Marianne Etzelmueller Bathen, Piyush Kumar, Misagh Ghezellou, Manuel Belanche, Lasse Vines, Jawad Ul-Hassan, Ulrike Grossner (2024) Dual configuration of shallow acceptor levels in 4H-SiC Materials Science in Semiconductor Processing, Vol. 177, Article 108360 Continue to DOI
Jonah Heiler, Jonathan Korber, Erik Hesselmeier, Pierre Kuna, Rainer Stohr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle, Christoph Becher, Florian Kaiser, Jorg Wrachtrup (2024) Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes (vol 9, 34, 2024) NPJ QUANTUM MATERIALS, Vol. 9, Article 39 Continue to DOI
Sachin Sharma, Justinas Palisaitis, Ivan Gueorguiev Ivanov, Per O A Persson, Henrik Pedersen, Hans Högberg (2024) The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films Advanced Materials Interfaces Continue to DOI
Jonah Heiler, Jonathan Koerber, Erik Hesselmeier, Pierre Kuna, Rainer Stoehr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle, Christoph Becher, Florian Kaiser, Joerg Wrachtrup (2024) Spectral stability of V2 centres in sub-micron 4H-SiC membranes NPJ QUANTUM MATERIALS, Vol. 9, Article 34 Continue to DOI
Erik Hesselmeier, Pierre Kuna, István Takács, Viktor Ivády, Wolfgang Knolle, Son Tien Nguyen, Misagh Ghezellou, Jawad ul-Hassan, Durga Dasari, Florian Kaiser, Vadim Vorobyov, Jörg Wrachtrup (2024) Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide Physical Review Letters, Vol. 132, Article 090601 Continue to DOI
Misagh Ghezellou, Jawad ul-Hassan (2024) Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers Physica status solidi. B, Basic research Continue to DOI

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