2018 Hussein M. Ayedh, Marianne E. Baathen, Augustinas Galeckas, Jawad ul-Hassan, Peder Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson (2018) (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing 2017 Louise Lilja, Ildiko Farkas, Ian Booker, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2017) Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers Silicon Carbide and Related Materials 2016 , s. 238-241 Continue to DOI 2016 Louise Lilja, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2016) Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates Silicon Carbide and Related Materials 2015 , s. 209-212 Continue to DOI H. A. A. Seed Ahmed, H. C. Swart, Peder Bergman, R. E. Kroon (2016) Concentration quenching of Eu2+ doped Ca2BO3Cl Materials research bulletin , Vol. 75 , s. 47-50 Continue to DOI A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, Galia Pozina, Peder Bergman, Bo Monemar, S. Rouvimov, S. V. Ivanov (2016) Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x < y similar to 0.8) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 , s. 232-238 Continue to DOI
Hussein M. Ayedh, Marianne E. Baathen, Augustinas Galeckas, Jawad ul-Hassan, Peder Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson (2018) (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing
Louise Lilja, Ildiko Farkas, Ian Booker, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2017) Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers Silicon Carbide and Related Materials 2016 , s. 238-241 Continue to DOI
Louise Lilja, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2016) Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates Silicon Carbide and Related Materials 2015 , s. 209-212 Continue to DOI
H. A. A. Seed Ahmed, H. C. Swart, Peder Bergman, R. E. Kroon (2016) Concentration quenching of Eu2+ doped Ca2BO3Cl Materials research bulletin , Vol. 75 , s. 47-50 Continue to DOI
A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, Galia Pozina, Peder Bergman, Bo Monemar, S. Rouvimov, S. V. Ivanov (2016) Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x < y similar to 0.8) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 , s. 232-238 Continue to DOI
Wide bandgap semiconductors We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.
Semiconductor Materials Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene. Department of Physics, Chemistry and Biology Undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.