Photo of Peder Bergman

Peder Bergman

Professor

Professor

Presentation

Publications

2023

Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Sveinbjörnsson, Ulrike Grossner, Peder Bergman, Lasse Vines, Jawad ul-Hassan (2023) The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers APL Materials, Vol. 11, Article 031107 (Article in journal) Continue to DOI

2018

Hussein M. Ayedh, Marianne E. Baathen, Augustinas Galeckas, Jawad ul-Hassan, Peder Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson (2018) (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing

2017

Louise Lilja, Ildiko Farkas, Ian Booker, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2017) Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers Silicon Carbide and Related Materials 2016, p. 238-241 (Conference paper) Continue to DOI

2016

Louise Lilja, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2016) Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates Silicon Carbide and Related Materials 2015, p. 209-212 (Conference paper) Continue to DOI
H. A. A. Seed Ahmed, H. C. Swart, Peder Bergman, R. E. Kroon (2016) Concentration quenching of Eu2+ doped Ca2BO3Cl Materials research bulletin, Vol. 75, p. 47-50 (Article in journal) Continue to DOI

Research

Organisation