Fotografi av Peder Bergman

Peder Bergman






Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Sveinbjörnsson, Ulrike Grossner, Peder Bergman, Lasse Vines, Jawad ul-Hassan (2023) The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers APL Materials, Vol. 11, Artikel 031107 Vidare till DOI


Hussein M. Ayedh, Marianne E. Baathen, Augustinas Galeckas, Jawad ul-Hassan, Peder Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson (2018) (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing


Louise Lilja, Ildiko Farkas, Ian Booker, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2017) Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers Silicon Carbide and Related Materials 2016, s. 238-241 Vidare till DOI


Louise Lilja, Jawad ul-Hassan, Erik Janzén, Peder Bergman (2016) Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates Silicon Carbide and Related Materials 2015, s. 209-212 Vidare till DOI
H. A. A. Seed Ahmed, H. C. Swart, Peder Bergman, R. E. Kroon (2016) Concentration quenching of Eu2+ doped Ca2BO3Cl Materials research bulletin, Vol. 75, s. 47-50 Vidare till DOI