Peder Bergman
Professor
Professor
Publikationer
2023
The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers
APL Materials, Vol. 11, Artikel 031107
(Artikel i tidskrift)
https://dx.doi.org/10.1063/5.0142415
2018
(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing
(Konferensbidrag)
https://dx.doi.org/10.1149/08612.0091ecst
2017
Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
Silicon Carbide and Related Materials 2016, s. 238-241
(Konferensbidrag)
https://dx.doi.org/10.4028/www.scientific.net/MSF.897.238
2016
Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates
Silicon Carbide and Related Materials 2015, s. 209-212
(Konferensbidrag)
https://dx.doi.org/10.4028/www.scientific.net/MSF.858.209
Concentration quenching of Eu2+ doped Ca2BO3Cl
Materials research bulletin, Vol. 75, s. 47-50
(Artikel i tidskrift)
https://dx.doi.org/10.1016/j.materresbull.2015.11.024