Photo of Plamen Paskov

Plamen Paskov

Associate Professor, Docent

Universitetslektor

Presentation

Publications

2024

Alexis Papamichail, Axel Persson, S. Richter, Vallery Stanishev, Nerijus Armakavicius, Philipp Kuhne, S. Guo, Per O A Persson, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2024) Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties Applied Physics Letters, Vol. 125, Article 123505 (Article in journal) Continue to DOI
Nerijus Armakavicius, Philipp Kuhne, Alexis Papamichail, Hengfang Zhang, Sean Robert Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert, Vanya Darakchieva (2024) Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect Materials, Vol. 17, Article 3343 (Article in journal) Continue to DOI
Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Article 182101 (Article in journal) Continue to DOI
Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 (Article in journal) Continue to DOI
Nerijus Armakavicius, Sean Robert Knight, Philipp Kuhne, Vallery Stanishev, Dat Tran, Steffen Richter, Alexis Papamichail, Megan Stokey, Preston Sorensen, Ufuk Kilic, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva (2024) Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect APL Materials, Vol. 12, Article 021114 (Article in journal) Continue to DOI