Plamen Paskov

Publications

2025

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Article 032104 (Article in journal) Continue to DOI

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Alexis Papamichail, Axel Persson, S. Richter, Vallery Stanishev, Nerijus Armakavicius, Philipp Kuhne, S. Guo, Per O A Persson, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2024) Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties Applied Physics Letters, Vol. 125, Article 123505 (Article in journal) Continue to DOI

Nerijus Armakavicius, Philipp Kuhne, Alexis Papamichail, Hengfang Zhang, Sean Robert Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert, Vanya Darakchieva (2024) Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect Materials, Vol. 17, Article 3343 (Article in journal) Continue to DOI

Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Article 182101 (Article in journal) Continue to DOI