Plamen Paskov

Publikationer

2025

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift) Vidare till DOI

2024

Alexis Papamichail, Axel Persson, S. Richter, Vallery Stanishev, Nerijus Armakavicius, Philipp Kuhne, S. Guo, Per O A Persson, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2024) Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties Applied Physics Letters, Vol. 125, Artikel 123505 (Artikel i tidskrift) Vidare till DOI

Nerijus Armakavicius, Philipp Kuhne, Alexis Papamichail, Hengfang Zhang, Sean Robert Knight, Axel Persson, Vallery Stanishev, Jr-Tai Chen, Plamen Paskov, Mathias Schubert, Vanya Darakchieva (2024) Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect Materials, Vol. 17, Artikel 3343 (Artikel i tidskrift) Vidare till DOI

Balasubramanian Sundarapandian, Dat Tran, Lutz Kirste, Patrik Stranak, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen Paskov, Oliver Ambacher (2024) Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Applied Physics Letters, Vol. 124, Artikel 182101 (Artikel i tidskrift) Vidare till DOI

Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga₂O₃(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Artikel 022708 (Artikel i tidskrift) Vidare till DOI