Plamen Paskov

Publikationer

2026

Dat Q. Tran, Tobias Kristensen, Rohith Soman, Mohamadali Malakoutian, Plamen Paskov, Niklas Rorsman, Mattias Thorsell, Srabanti Chowdhury, Vanya Darakchieva (2026) Resolving Lateral Heat Transport in GaN-on-SiC HEMT Structures via Transient Thermometry Advanced Materials Technologies (Artikel i tidskrift) https://dx.doi.org/10.1002/admt.71327

Byeongchan So, Dat Tran, Adamantia Logotheti, Minho Kim, Jovana Malm, Navya Sri Garigapati, Erik Lind, Plamen Paskov, Michal Bockowski, Vanya Darakchieva (2026) Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates Crystal Growth & Design, Vol. 26, s. 1824-1832 (Artikel i tidskrift) https://dx.doi.org/10.1021/acs.cgd.5c01615

Minho Kim, Dat Tran, Plamen Paskov, Uiho Choi, Okhyun Nam, Vanya Darakchieva (2026) Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs Applied Physics Letters, Vol. 128, Artikel 042105 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0310464

Ingemar Persson, Hengfang Zhang, Alexis Papamichail, Plamen Paskov, Vanya Darakchieva (2026) Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001) ACS Applied Electronic Materials, Vol. 8, s. 865-870 (Artikel i tidskrift) https://dx.doi.org/10.1021/acsaelm.5c02115

2025

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Artikel 032104 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0282836