2023 Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Artikel 112481 Vidare till DOI Dat Tran, Ferenc Tasnadi, Agne Zukauskaite, Jens Birch, Vanya Darakchieva, Plamen Paskov (2023) Thermal conductivity of ScxAl1-xN and YxAl1-xN alloys Applied Physics Letters, Vol. 122, Artikel 182107 Vidare till DOI Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Plamen Paskov, Vanya Darakchieva (2023) High-quality N-polar GaN optimization by multi-step temperature growth process Journal of Crystal Growth, Vol. 603, Artikel 127002 Vidare till DOI Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2023) Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers Applied Physics Letters, Vol. 122, Artikel 153501 Vidare till DOI Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 Vidare till DOI
Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Artikel 112481 Vidare till DOI
Dat Tran, Ferenc Tasnadi, Agne Zukauskaite, Jens Birch, Vanya Darakchieva, Plamen Paskov (2023) Thermal conductivity of ScxAl1-xN and YxAl1-xN alloys Applied Physics Letters, Vol. 122, Artikel 182107 Vidare till DOI
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Plamen Paskov, Vanya Darakchieva (2023) High-quality N-polar GaN optimization by multi-step temperature growth process Journal of Crystal Growth, Vol. 603, Artikel 127002 Vidare till DOI
Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2023) Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers Applied Physics Letters, Vol. 122, Artikel 153501 Vidare till DOI
Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 Vidare till DOI