Photo of Ching-Lien Hsiao

Ching-Lien Hsiao

Associate Professor, Docent

Development of electronic-grade nitride semiconductor thin films and complex nanostructures grown by magnetron sputter epitaxy for the applications of chiroptical elements, electronics, and optoelectronics.

Presentation

Dr Ching-Lien Hsiao is a associate professor at the Department of Physics, Chemistry, and Biology (IFM), Linköping University (LiU)

Dr. Ching‑Lien Hsiao is Associate Professor (Docent) in Thin‑Film Physics Division at the Department of Physics, Chemistry and Biology (IFM), Linköping University (LiU). His research focuses on electronic‑grade nitride semiconductors produced by magnetron sputter epitaxy (MSE), with applications in electronics, optoelectronics and chiroptical components.

Since joining LiU in 2009, Dr. Hsiao has worked as postdoctoral researcher, assistant professor, principal research engineer and senior lecturer. He investigates nanostructure formation mechanisms and develops advanced optical elements using nanostructures created by MSE and glancing‑angle deposition. His research is supported by major Swedish funding bodies, including the Swedish Research Council, Swedish Energy Agency, Olle Engkvists Stiftelse, Carl Tryggers Stiftelse, STINT, WISE, and LiU. He has authored more than 110 peer‑reviewed scientific publications.

Research Highlights

  • Electronic‑grade nitride semiconducting materials: Development of high‑quality III-nitride, ferroelectric nitride, and transition metal nitride semiconductors via MSE.
  • Nanostructure formation mechanisms: Insights into growth dynamics and defect evolution in III‑nitrides.
  • Optical elements from nanostructures: Tailoring anisotropy, chirality and optical response using MSE‑grown materials.
  • Oxide semiconductor contributions: Co‑author of recent work on ultrawide bandgap Ga₂O₃-based MOSFET and HEMT structures for high‑power applications.
  • Extensive scientific output: More than 110 peer‑reviewed publications across thin‑film physics and semiconductor materials.

On-going research projects

Development of Sc(Al;Ga)N ferroelectric semiconductors for efficient memory device application

By substituting Sc in conventional wurtzite III-nitride semiconductors, AlN and GaN, the resulting ternary ScAlN and ScGaN become ferroelectrics, which will be used in particular for storage-class memory to fill the gap between non-volatile memory (NVM) storage and volatile memory devices. In addition, both ternary nitrides also exhibit strong piezoelectric and nonlinear optical properties and can be integrated with Si and III-nitride technologies. This opens for a wide range of future electronic, optoelectronic, and electromechanical applications. Since these unique properties are built on the uniaxial polar crystal structure, growth of these materials with defect-free single crystals becomes the key. However, synthesis of single-crystal Sc(Al;Ga)N thin films with low defect density is still challenging, which impedes fabrication of devices with high performance. In this project, we will study the growth of electronic-graded ternary Sc(Al;Ga)N ferroelectric semiconductors using an industrial compatible magnetron sputter epitaxy (MSE) technique for developing emerging ferroelectric devices.

The research is supported by several funding sources:
Funding source: Olle Engkvists Stiftelse
Period: 2025-2028
Postdoc: Rohini Mallikarjun Sanikop
Funding source: LiU, Material Science for Sustainable Technologies (MATTER )
Period: 2025-2026
Equipment: Ferroelectric Analyzer
Funding source: Carl Tryggers Stiftelse
Period: 2025-2027
Equipment: Ferroelectric Analyzer

Towards smaller, brighter and more efficient InGaN-based red micro-LEDs

This project addresses these challenges by developing low-temperature, environmentally friendly manufacturing processes for fabricating high-brightness and efficient red(R)/green(G)/blue(B) µ-LEDs, advancing sustainable innovation while pushing the boundaries of state-of-the-art technology.

Funding source: WISE (Wallenberg Initiative Materials Science for Sustainability)
Research grant for industrial postdoc with Polar-Light Technologies AB, Sweden
Period: 2025-2027
Postdoc: Sachin Sharma


Heterogenous InGaN/Ta3(ON)5 nanostructures for green solar-to-hydrogen fuel production

Hydrogen (H2) has extremely high gravimetric energy density, which is considering as a very important and promising energy. It has capability for the use of, such as transportation, existing industrial infrastructure, and replacing fossil fuels in power plants. However, the production of H2 is still generated from fossil fuels through steam methane reforming, methane partial oxidation, and coal gasification processes, which results in huge global CO2 emissions. Alternatively, production of ‘green’ hydrogen fuel by photocatalytic water splitting provides one of the most promising pathways for carbon neutrality.

In this project. We aim to develop a novel tandem photoelectrode using heterogenous photocatalytical-active indium gallium nitride (InGaN) and tantalum oxynitride (Ta3(ON)5) semiconductor nanostructures for efficiently generate ‘green’ hydrogen fuel

Funding source: Olle Engkvists Stiftelse
Period: 2024-2027
Postdoc: Shailesh Kalal


Equipment for in-situ surface analysis 

The purpose of this project is to develop an in-situ surface characterization technique, reflection high energy electron diffraction (RHEED), to study the crystalline structure, morphology, and composition of thin film during growth and post-growth treatment in an industrial compatible magnetron sputter epitaxy (MSE). With such support, our pioneering study on the development of electronic-grade thick GaN film, ternary III-nitride alloys (i.e., InGaN, AlGaN, and InAlN) pseudo-substrates and heterostructures will be realized for the use of fabricating energy-saving LEDs and high-efficiency photovoltaics.

Funding source: Carl Tryggers Stiftelse
Period: 2023-2026
Equipment: RHEED

Publications

2026

Chun-Chia Chang, Sheng-Ti Chung, Siddharth Rana, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng (2026) Performance study of non-recess structure for ß-Ga2O3 MOSFETs applications Results in Engineering (RINENG), Vol. 29, Article 108757 (Article in journal) Continue to DOI

2025

Yun-Cheng Hsu, Yu-Hsuan Hsu, Chien-Chung Lin, Ming Hsien Wu, Hao Chung Kuo, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng (2025) Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process NEXT NANOTECHNOLOGY, Vol. 7, Article 100101 (Article in journal) Continue to DOI
A. Akshaya, K. C. Bhamu, Shailesh Kalal, Rinkoo Bhabal, Akhil Tayal, Andrei Gloskovskii, N. Zema, Nainesh Patel, Sung Gu Kang, Ching-Lien Hsiao, Mukul Gupta (2025) Negative-Valent Palladium-Stabilized CoPdN Thin Films as a Catalyst for the Oxygen Evolution Reaction ACS Applied Nano Materials, Vol. 8, p. 24003-24012 (Article in journal) Continue to DOI
Ching-Hsuan Lee, Sheng-Ti Chung, Chien-Nan Hsiao, Po-Hsun Chen, Po-Liang Liu, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng (2025) Substrate Off-Cut Effect on the Performance of Enhancement-Mode ß-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors ACS Applied Electronic Materials, Vol. 7, p. 11229-11239 (Article in journal) Continue to DOI
Shailesh Kalal, Martin Magnuson, Alessandro Chesini, Akshaya A, Sanath Kumar Honnali, Sophia Sahoo, Nakul Jain, Dibyendu Bhattacharyya, Andrei Gloskovskii, Mukul Gupta, Feng Wang, Michele Orlandi, Grzegorz Greczynski, Kenneth Järrendahl, Per Eklund, Jens Birch, Ching-Lien Hsiao (2025) Defect Engineering in Ti-Doped Ta3N5 Thin Films for Enhanced Photoelectrochemical Water Splitting: Electronic Structure Modulation and Charge Carrier Dynamics Small Structures, Article e202500504 (Article in journal) Continue to DOI

Research

Organisation