Dr Ching-Lien Hsiao is a senior lecturer (docent) at the Department of Physics, Chemistry, and Biology (IFM), Linköping University (LiU)

He obtained PhD degree in physics at National Sun Yat-Sen University, Taiwan, in 2004. His PhD study on the growth of GaN nanorods by plasma-assisted molecular-beam epitaxy (PAMBE) was a pioneering research in the field of nanotechnology. After PhD., he did four-year postdoc at Center for Condensed Matter Sciences, National Taiwan University, Taiwan. In 2008, he awarded outstanding postdoc fellowship grant under National Science Council (Now, Ministry of Science and Technology) for developing nonpolar InN using PAMBE. After 2009, he worked as a postdoc, assistant professor, principal research engineer, and senior lecturer at IFM, LiU.

His research is focused on the development of electronic-grade group III-nitride semiconductors, AlN, GaN, and InN, thin films and nanostructures by magnetron sputter epitaxy (MSE) for future industrial production. Meanwhile, he also studies the formation mechanisms of nanostructures and develops optical elements using complex nanostructures grown by MSE and glancing angle deposition. Up-to-now. he has published more than 70 scientific papers. His research attracts attentions and is supported by several funding agencies in Sweden, such as Swedish Research Council, Swedish Energy Agency, Olle Engkvists Stiftelse, and STINT.

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