The image shows a LiU logo consisted of GaN nanorods grown onto the patterned area on a Si substrate by magnetron sputter epitaxy. The LiU logo pattern was created a TiNx mask grown on the Si substrate using focused ion beam lithography technique.
The Nano Materials Science group in the Thin Film Physics division is conducting focused research aiming at understanding and controlling atomistic processes during synthesis of nanostructures and thin films. The common goal is to create new processes and materials to provide unique materials properties for society to exploit.
Some examples:
InAlN and GaN nanorods, quantum dots, and heterostructures for LED applications
Wide band-gap BN-epilayers for electronics and neutron detectors
Wurtzite group-3A group-3B Nitrides with enhanced piezo-electric properties
Low-temperature growth of boron carbide for state-of-the-art neutron detectors at ESS
Quasicrystalline thin films providing unique combinations of physical properties
Superlattices and multilayers with sub-nm layers and atomically abrupt interfaces
