Vanya Darakchieva

Professor, Head of Unit

Publications

2025

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Adamantia Logotheti, Navya Sri Garigapati, Byeongchan So, Jovana Colvin, Vanya Darakchieva, Erik Lind (2024) Low Resistivity n-type GaN Ohmic Contacts on GaN Substrates Physica Status Solidi (a) applications and materials science (Article in journal) Continue to DOI
Bjorn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo, Vanya Darakchieva, Anna Malmros, Hans Hjelmgren, Mattias Thorsell, Niklas Rorsman (2024) Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices (Article in journal) Continue to DOI
Hui Zeng, Weimin Wang, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Jianwu Sun (2024) Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction Applied Physics Letters, Vol. 125, Article 162102 (Article in journal) Continue to DOI
Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniela Gogova-Petrova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva (2024) Effective uniaxial dielectric function tensor and optical phonons in (¯2⁢01)-oriented ��-Ga2⁢O3 films with equally distributed sixfold-rotation domains Physical Review Applied, Vol. 22, Article 044003 (Article in journal) Continue to DOI

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