Vanya Darakchieva

Professor, Head of Unit




Ragnar Ferrand-Drake Del Castillo, Ding-Yuan Chen, Jr-Tai Chen, Mattias Thorsell, Vanya Darakchieva, Niklas Rorsman (2024) Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs IEEE Transactions on Electron Devices Continue to DOI
Anders Gustafsson, Axel Persson, Per O A Persson, Vanya Darakchieva, Zhaoxia Bi, Lars Samuelson (2024) Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures Nanotechnology, Vol. 35, Article 255703 Continue to DOI
Daniela Gogova-Petrova, Dat Tran, Vallery Stanishev, Valdas Jokubavicius, L. Vines, M. Schubert, Rositsa Yakimova, Plamen Paskov, Vanya Darakchieva (2024) High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 022708 Continue to DOI
Nerijus Armakavicius, Sean Robert Knight, Philipp Kuhne, Vallery Stanishev, Dat Tran, Steffen Richter, Alexis Papamichail, Megan Stokey, Preston Sorensen, Ufuk Kilic, Mathias Schubert, Plamen Paskov, Vanya Darakchieva (2024) Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect APL Materials, Vol. 12, Article 021114 Continue to DOI
Sean Robert Knight, Steffen Richter, Alexis Papamichail, Megan Stokey, Rafal Korlacki, Vallery Stanishev, Philipp Kuhne, Mathias Schubert, Vanya Darakchieva (2024) Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate Applied Physics Letters, Vol. 124, Article 032101 Continue to DOI