2023 Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2023) Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers Applied Physics Letters, Vol. 122, Article 153501 Continue to DOI Philipp Gribisch, Rosalia Delgado Carrascon, Vanya Darakchieva, Erik Lind (2023) Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates IEEE Transactions on Electron Devices, Vol. 70, p. 2408-2414 Continue to DOI Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, p. 1049-1056 Continue to DOI 2022 Rafal Korlacki, Matthew Hilfiker, Jenna Knudtson, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Vanya Darakchieva, Mathias Schubert (2022) Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1-x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010) Physical Review Applied, Vol. 22, Article 064019 Continue to DOI Rosalia Delgado Carrascon, Steffen Richter, Muhammad Nawaz, Plamen Paskov, Vanya Darakchieva (2022) Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies Crystal Growth & Design Continue to DOI
Alexis Papamichail, Axel Persson, Steffen Richter, Philipp Kuhne, Vallery Stanishev, Per O A Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, Plamen Paskov, N. Rorsman, Vanya Darakchieva (2023) Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers Applied Physics Letters, Vol. 122, Article 153501 Continue to DOI
Philipp Gribisch, Rosalia Delgado Carrascon, Vanya Darakchieva, Erik Lind (2023) Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates IEEE Transactions on Electron Devices, Vol. 70, p. 2408-2414 Continue to DOI
Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, p. 1049-1056 Continue to DOI
Rafal Korlacki, Matthew Hilfiker, Jenna Knudtson, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Vanya Darakchieva, Mathias Schubert (2022) Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1-x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010) Physical Review Applied, Vol. 22, Article 064019 Continue to DOI
Rosalia Delgado Carrascon, Steffen Richter, Muhammad Nawaz, Plamen Paskov, Vanya Darakchieva (2022) Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies Crystal Growth & Design Continue to DOI
Semiconductor Device Materials Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.
SEK 68 million for research into new materials Materials scientists Vaya Darakchieva and Johanna Rosén have each been awarded over SEK 30 million from the Swedish Foundation for Strategic Research. They aim to develop new materials for more efficient energy systems.
Unique instrument shines through most everything Low-frequency light reveals internal structures and properties in all conceivable materials. A research team at LiU has built a one-of-a-kind spectrometer that analyses samples with electromagnetic waves in the terahertz range.
30 millions to research infrastructure Vanya Darakchieva and Per Persson, both at IFM, Department of Physics, Chemistry and Biology, each receive 15 million from SSF for the expansion of research infrastructure at LiU.
Semiconductor Materials (HALV) Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene.
Department of Physics, Chemistry and Biology (IFM) Undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.