Vanya Darakchieva

Professor, Head of Unit

Publications

2025

Katrin Pingen, Niklas Wolff, Alexander M. Hinz, Per Sandström, Susanne Beuer, Lorenz Kienle, Vanya Darakchieva, Lars Hultman, Jens Birch, Ching-Lien Hsiao (2025) Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy? Applied Surface Science Advances, Vol. 26, Article 100722 (Article in journal) Continue to DOI
Viktor Rindert, Zbigniew Galazka, Mathias Schubert, Vanya Darakchieva (2025) High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr<SUP>3+</SUP> in <i>ß</i>-Ga<sub>2</sub>O<sub>3</sub> Applied Physics Letters, Vol. 126, Article 082105 (Article in journal) Continue to DOI
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Article 127971 (Article in journal) Continue to DOI

2024

Adamantia Logotheti, Navya Sri Garigapati, Byeongchan So, Jovana Colvin, Vanya Darakchieva, Erik Lind (2024) Low Resistivity n-type GaN Ohmic Contacts on GaN Substrates Physica Status Solidi (a) applications and materials science (Article in journal) Continue to DOI
Bjorn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo, Vanya Darakchieva, Anna Malmros, Hans Hjelmgren, Mattias Thorsell, Niklas Rorsman (2024) Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices (Article in journal) Continue to DOI

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