Vanya Darakchieva

Professor, Head of Unit

Publications

2026

Yu-Hsuan Hsu, Roger Magnusson, Rohini Sanikop, Shailesh Kalal, Justinas Palisaitis, Sagar Jathar, Katrin Pingen, Per Sandström, Issa Nseir, Arnaud le Febvrier, Urban Forsberg, Ray-Hua Horng, Kenneth Järrendahl, Per Eklund, Vanya Darakchieva, Jens Birch, Ching-Lien Hsiao (2026)

Growth and optical properties of polar-, nonpolar, and semi-polar wurtzite ScGaN films Applied Physics Letters, Vol. 129, Article 031902 (Article in journal)

https://dx.doi.org/10.1063/5.0325421

Navya Sri Garigapati, Byeongchan So, Mikael Bjork, Muhammad Nawaz, Vanya Darakchieva, Erik Lind (2026)

a-plane GaN-based fully vertical FinFETs with normally-off operation Semiconductor Science and Technology, Vol. 41, Article 055006 (Article in journal)

https://dx.doi.org/10.1088/1361-6641/ae6364

Preston Sorensen, Alyssa Mock, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Zbigniew Galazka, Vanya Darakchieva, Mathias Schubert (2026)

Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of ß-(AlxGa1-x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry Applied Physics Letters, Vol. 128, Article 122104 (Article in journal)

https://dx.doi.org/10.1063/5.0320403

N. S. Garigapati, A. Logotheti, B. So, J. Malm, P. Prystawko, I. Grzegory, M. Nawaz, M. Bjork, Vanya Darakchieva, E. Lind (2026)

AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments Applied Physics Letters, Vol. 128, Article 112109 (Article in journal)

https://dx.doi.org/10.1063/5.0310395

Navya Sri Garigapati, Adamantia Logotheti, Byeongchan So, Jovana Malm, Pawel Prystawko, Izabella Grzegory, Muhammad Nawaz, Mikael Bjork, Vanya Darakchieva, Erik Lind (2026)

Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs Applied Physics Letters, Vol. 128, Article 062104 (Article in journal)

https://dx.doi.org/10.1063/5.0309620

Research

Semiconductor Device Materials

Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.

News

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Research for a sustainable future in ten new projects

Photosynthetic materials, two-dimensional noble metals and sustainable semiconductors are some of the projects at LiU that have been granted funding from the research programme Wallenberg initiative materials science for sustainability – WISE.

Organisation

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Semiconductor Materials (HALV)

Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene.

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Department of Physics, Chemistry and Biology (IFM)

Excellent undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.