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Vanya Darakchieva

Professor, Head of Unit

Publications

2026

Preston Sorensen, Alyssa Mock, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Zbigniew Galazka, Vanya Darakchieva, Mathias Schubert (2026) Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of ß-(AlxGa1-x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry Applied Physics Letters, Vol. 128, Article 122104 (Article in journal) Continue to DOI
N. S. Garigapati, A. Logotheti, B. So, J. Malm, P. Prystawko, I. Grzegory, M. Nawaz, M. Bjork, Vanya Darakchieva, E. Lind (2026) AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments Applied Physics Letters, Vol. 128, Article 112109 (Article in journal) Continue to DOI
Navya Sri Garigapati, Adamantia Logotheti, Byeongchan So, Jovana Malm, Pawel Prystawko, Izabella Grzegory, Muhammad Nawaz, Mikael Bjork, Vanya Darakchieva, Erik Lind (2026) Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs Applied Physics Letters, Vol. 128, Article 062104 (Article in journal) Continue to DOI
Byeongchan So, Dat Tran, Adamantia Logotheti, Minho Kim, Jovana Malm, Navya Sri Garigapati, Erik Lind, Plamen Paskov, Michal Bockowski, Vanya Darakchieva (2026) Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates Crystal Growth & Design, Vol. 26, p. 1824-1832 (Article in journal) Continue to DOI
Minho Kim, Dat Tran, Plamen Paskov, Uiho Choi, Okhyun Nam, Vanya Darakchieva (2026) Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs Applied Physics Letters, Vol. 128, Article 042105 (Article in journal) Continue to DOI

Research

Semiconductor Device Materials

Our research focuses on the development of novel semiconductor materials for high-frequency and power electronics.

News

Two pipettes poring liquids on to a disk.

Research for a sustainable future in ten new projects

Photosynthetic materials, two-dimensional noble metals and sustainable semiconductors are some of the projects at LiU that have been granted funding from the research programme Wallenberg initiative materials science for sustainability – WISE.

Unique instrument shines through most everything

Low-frequency light reveals internal structures and properties in all conceivable materials. A research team at LiU has built a one-of-a-kind spectrometer that analyses samples with electromagnetic waves in the terahertz range.

Organisation

A light-green thin sheet is immersed in water.

Semiconductor Materials (HALV)

Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene.
Person with transmission electron microscope.

Department of Physics, Chemistry and Biology (IFM)

Excellent undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.

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