Platshållare för saknad bild till Vanya Darakchieva

Vanya Darakchieva

Professor, Enhetschef

Publikationer

2026

Navya Sri Garigapati, Byeongchan So, Mikael Bjork, Muhammad Nawaz, Vanya Darakchieva, Erik Lind (2026) a-plane GaN-based fully vertical FinFETs with normally-off operation Semiconductor Science and Technology, Vol. 41, Artikel 055006 (Artikel i tidskrift) Vidare till DOI
Preston Sorensen, Alyssa Mock, Megan Stokey, Ufuk Kilic, Akhil Mauze, Yuewei Zhang, James Speck, Zbigniew Galazka, Vanya Darakchieva, Mathias Schubert (2026) Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of ß-(AlxGa1-x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry Applied Physics Letters, Vol. 128, Artikel 122104 (Artikel i tidskrift) Vidare till DOI
N. S. Garigapati, A. Logotheti, B. So, J. Malm, P. Prystawko, I. Grzegory, M. Nawaz, M. Bjork, Vanya Darakchieva, E. Lind (2026) AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments Applied Physics Letters, Vol. 128, Artikel 112109 (Artikel i tidskrift) Vidare till DOI
Navya Sri Garigapati, Adamantia Logotheti, Byeongchan So, Jovana Malm, Pawel Prystawko, Izabella Grzegory, Muhammad Nawaz, Mikael Bjork, Vanya Darakchieva, Erik Lind (2026) Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs Applied Physics Letters, Vol. 128, Artikel 062104 (Artikel i tidskrift) Vidare till DOI
Byeongchan So, Dat Tran, Adamantia Logotheti, Minho Kim, Jovana Malm, Navya Sri Garigapati, Erik Lind, Plamen Paskov, Michal Bockowski, Vanya Darakchieva (2026) Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates Crystal Growth & Design, Vol. 26, s. 1824-1832 (Artikel i tidskrift) Vidare till DOI

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