Vanya Darakchieva

Professor, Enhetschef

Publikationer

2025

Katrin Pingen, Niklas Wolff, Alexander M. Hinz, Per Sandström, Susanne Beuer, Lorenz Kienle, Vanya Darakchieva, Lars Hultman, Jens Birch, Ching-Lien Hsiao (2025) Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy? Applied Surface Science Advances, Vol. 26, Artikel 100722 (Artikel i tidskrift) Vidare till DOI
Viktor Rindert, Zbigniew Galazka, Mathias Schubert, Vanya Darakchieva (2025) High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr<SUP>3+</SUP> in <i>ß</i>-Ga<sub>2</sub>O<sub>3</sub> Applied Physics Letters, Vol. 126, Artikel 082105 (Artikel i tidskrift) Vidare till DOI
Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift) Vidare till DOI

2024

Adamantia Logotheti, Navya Sri Garigapati, Byeongchan So, Jovana Colvin, Vanya Darakchieva, Erik Lind (2024) Low Resistivity n-type GaN Ohmic Contacts on GaN Substrates Physica Status Solidi (a) applications and materials science (Artikel i tidskrift) Vidare till DOI
Bjorn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo, Vanya Darakchieva, Anna Malmros, Hans Hjelmgren, Mattias Thorsell, Niklas Rorsman (2024) Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices (Artikel i tidskrift) Vidare till DOI

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