Vanya Darakchieva
Professor, Enhetschef
Publikationer
2026
a-plane GaN-based fully vertical FinFETs with normally-off operation
Semiconductor Science and Technology, Vol. 41, Artikel 055006
(Artikel i tidskrift)
https://dx.doi.org/10.1088/1361-6641/ae6364
Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of ß-(AlxGa1-x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry
Applied Physics Letters, Vol. 128, Artikel 122104
(Artikel i tidskrift)
https://dx.doi.org/10.1063/5.0320403
AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments
Applied Physics Letters, Vol. 128, Artikel 112109
(Artikel i tidskrift)
https://dx.doi.org/10.1063/5.0310395
Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs
Applied Physics Letters, Vol. 128, Artikel 062104
(Artikel i tidskrift)
https://dx.doi.org/10.1063/5.0309620
Crystal Growth Design for Bowing Mitigation in Thick AlGaN Layers on GaN Substrates
Crystal Growth & Design, Vol. 26, s. 1824-1832
(Artikel i tidskrift)
https://dx.doi.org/10.1021/acs.cgd.5c01615