Vanya Darakchieva

Professor, Enhetschef

Publikationer

2025

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift) Vidare till DOI

2024

Adamantia Logotheti, Navya Sri Garigapati, Byeongchan So, Jovana Colvin, Vanya Darakchieva, Erik Lind (2024) Low Resistivity n-type GaN Ohmic Contacts on GaN Substrates Physica Status Solidi (a) applications and materials science (Artikel i tidskrift) Vidare till DOI
Bjorn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo, Vanya Darakchieva, Anna Malmros, Hans Hjelmgren, Mattias Thorsell, Niklas Rorsman (2024) Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique IEEE Transactions on Electron Devices (Artikel i tidskrift) Vidare till DOI
Hui Zeng, Weimin Wang, Ivan Gueorguiev Ivanov, Vanya Darakchieva, Jianwu Sun (2024) Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction Applied Physics Letters, Vol. 125, Artikel 162102 (Artikel i tidskrift) Vidare till DOI
Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniela Gogova-Petrova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva (2024) Effective uniaxial dielectric function tensor and optical phonons in (¯2⁢01)-oriented ��-Ga2⁢O3 films with equally distributed sixfold-rotation domains Physical Review Applied, Vol. 22, Artikel 044003 (Artikel i tidskrift) Vidare till DOI

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