Pedersen Group (Chemistryat the vapour-solid interface to manipulate materials at the atomic scale)

Pedersen group
Pedersen Group 2023

We are living in a material world and chemistry is key to make, and shape materials at the smallest scales. The Pedersen research group at Linköping University is using and studying chemical reactions, at the interphase between surfaces and gases, capable of manipulating materials at the atomic scale.

Thin films, or thin layers of materials, are all around us, from the photochromic coating on windows to the hard coating on drills. All electronic devices are constructed from stacks of thin films with carefully controlled properties. Much of the work in the Pedersen group is centred around chemical vapour deposition (CVD), a process for deposing thin film by chemical reaction s between molecules and surfaces. Our aim is to develop better CVD routes to deposit materials for applications ranging from hard coatings on cutting tools, to neutron converter layers for neutron detectors, to electrically conducting, insulating, and semiconducting layers for electronic chip fabrication. We are also exploring “reversed CVD”, i.e., etching of materials by surface chemical reactions.

Plasma discharge above the substrate holder Plasma discharge above the substrate holder in one of our CVD reactors.

Surface chemistry is central

vCross section electron micrograph of a silicon carbide Cross section electron micrograph of a silicon carbide film where the crystal orientation was altered during the CVD growth by using aliphatic or aromatic hydrocarbons in alternating cycles. From Huang et al. Surf. Coat. Technol. 2022, 447, 128853. Fully controlled and fully understood surface chemistry is at the centre of our research. To this goal we explore various time-resolved CVD approaches, e.g., atomic layer deposition (ALD), surface passivating molecules, and reaction kinetics control to enhance deposition into deep features. We are pioneering surface chemical reactions with free electrons from plasmas, accessing new ways to deposit and etch materials.

Sustainable production

Illustratiive oicture showing Perfectly conformal, amorphous B5C film deposited on a 8:1 aspect ratio silicon structure Perfectly conformal, amorphous B5C film deposited on a 8:1 aspect ratio silicon structure by controlling the deposition kinetics in a continuous CVD process. From Choolakkal et al. J. Vac. Sci. Technol. A 2023, 41, 013401. We are also studying how CVD processesCross section electron micrograph of a silicon carbide film where the crystal orientation was altered during the CVD growth by using aliphatic or aromatic hydrocarbons in alternating cycles. From Huang et al. Surf. Coat. Technol. 2022, 447, 128853.can be more sustainable by better design of CVD reactors and CVD chemistry, and by developing life cycle assessment (LCA) methods for CVD processes. The aim of our work is easier and better processes to manipulate materials at the atomic scale for e.g., a better and more sustainable fabrication of chips. Such processes have relevance for several of the UN sustainability goals, e.g., Clean Energy (goal 7), and Industrial Innovation (goal 9).

We collaborate closely with computational groups for studies of CVD gas phase- and surface chemistry, and with materials science- and plasma physics groups, as well as with several companies. If you want to do a bachelor- och master thesis with us, or collaborate in some way, please contact Henrik Pedersen.

 

IllustrationAdsorption of trimethyl aluminium onto an amino terminated AlN (0001) surface showing (a) the potential energy surface for adsorption and (b) the molecular structure for adsorption at an energy minimum, forming a Lewis adduct, and (c) transition state structure for diffusing between two Lewis adduct sites. From Rönnby et al. J. Mater. Chem. C 2023, 11, 13935.

 

Publications

2024

Pentti Niiranen, Anna Kapran, Hama Nadhom, Martin Cada, Zdenek Hubicka, Henrik Pedersen, Daniel Lundin (2024) Plasma electron characterization in electron chemical vapor deposition Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 42, Article 023006 Continue to DOI

2023

Giane Damas, Karl Rönnby, Henrik Pedersen, Lars Ojamäe (2023) Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study Journal of Chemical Physics, Vol. 158, Article 174313 Continue to DOI
Karl Rönnby, Henrik Pedersen, Lars Ojamäe (2023) Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlN Journal of Materials Chemistry C, Vol. 11, p. 13935-13945 Continue to DOI
Jing-Jia Huang, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, Henrik Pedersen (2023) Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 41, Article 030403 Continue to DOI
Karl Rönnby, Henrik Pedersen, Lars Ojamäe (2023) On the limitations of thermal atomic layer deposition of InN using ammonia Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 41, Article 020401 Continue to DOI
Arun Haridas Choolakkal, Hans Högberg, Jens Birch, Henrik Pedersen (2023) Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 41, Article 013401 Continue to DOI
Pentti Niiranen, Hama Nadhom, Michal Zanaska, Robert Boyd, Mauricio Sortica, Daniel Primetzhofer, Daniel Lundin, Henrik Pedersen (2023) Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons Review of Scientific Instruments, Vol. 94, Article 023902 Continue to DOI
Henrik Pedersen, Hsu Chih-Wei, Neeraj Nepal, Jefferey M. Woodward, Charles R. Eddy (2023) Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys Crystal Growth & Design, Vol. 23, p. 7010-7025 Continue to DOI
M. Povoli, A. Kok, O. Koybasi, M. Getz, G. ONeill, D. Roehrich, E. Monakhov, Henrik Pedersen, Jens Birch, Arun Haridas Choolakkal, K. Kanaki, C. -C. Lai, R. Hall-Wilton, T. Slavicek, I. Llamas Jansa (2023) 3D silicon detectors for neutron imaging applications Journal of Instrumentation, Vol. 18, Article C01056 Continue to DOI
Ganpati Ramanath, Collin Rowe, Geetu Sharma, Venkat Venkataramani, Johan G. Alauzun, Ravishankar Sundararaman, Pawel Keblinski, Davide Sangiovanni, Per Eklund, Henrik Pedersen (2023) Engineering inorganic interfaces using molecular nanolayers Applied Physics Letters, Vol. 122, Article 260502 Continue to DOI
Laurent Souqui, Hans Högberg, Henrik Pedersen (2023) Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboron Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 41, Article 063412 Continue to DOI

2022

Chih-Wei Hsu, Ivan Martinovic, Roger Magnusson, Babak Bakhit, Justinas Palisaitis, Per O A Persson, Polla Rouf, Henrik Pedersen (2022) Homogeneous high In content InxGa1-x N films by supercycle atomic layer deposition Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 40, Article 060402 Continue to DOI
Jing-Jia Huang, Christian Militzer, Jinghao Xu, Charles Wijayawardhana, Urban Forsberg, Henrik Pedersen (2022) Growth of silicon carbide multilayers with varying preferred growth orientation Surface & Coatings Technology, Vol. 447, Article 128853 Continue to DOI
Laurent Souqui, Sachin Sharma, Hans Högberg, Henrik Pedersen (2022) Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor deposition Dalton Transactions, Vol. 51, p. 15974-15982 Continue to DOI
Can Lu, Nathan O´Brien, Polla Rouf, Richard Dronskowski, Henrik Pedersen, Adam Slabon (2022) Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer deposition Green Chemistry Letters and Reviews, Vol. 15, p. 658-670 Continue to DOI
Jing-Jia Huang, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, Henrik Pedersen (2022) Conformal and superconformal chemical vapor deposition of silicon carbide coatings Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 40, Article 053402 Continue to DOI
Jing-Jia Huang, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, Lars Ojamäe, Henrik Pedersen (2022) Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC The Journal of Physical Chemistry C, Vol. 126, p. 9918-9925 Continue to DOI
Sachin Sharma, Laurent Souqui, Henrik Pedersen, Hans Högberg (2022) Chemical vapor deposition of sp(2)-boron nitride films on Al2O3 (0001), (11 2 over bar 0), (1 1 over bar 02), and (10 1 over bar 0) substrates Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, Vol. 40, Article 033404 Continue to DOI
Karl Rönnby, Henrik Pedersen, Lars Ojamäe (2022) Surface Structures from NH(3) Chemisorption in CVD and ALD of AlN, GaN, and InN Films The Journal of Physical Chemistry C, Vol. 126, p. 5885-5895 Continue to DOI
Giane Damas, Karl Rönnby, Henrik Pedersen, Lars Ojamäe (2022) Understanding indium nitride thin film growth under ALD conditions by atomic scale modelling: From the bulk to the In-rich layer Applied Surface Science, Vol. 592, Article 153290 Continue to DOI

Contact Pedersen Group

Members Pedersen Group

Back to Chemistry

Read more about IFM, Department och Physics, Chemistry and Biology