Materials Optics unit

Photographer: Olov Planthaber

Materials Optics is a unit under the Thin Film Physics Division. We combine material optics and development of ellipsometric methodology to analyse optical properties and nanostructures of bulk materials, thin films and their interfaces. Our main technique is spectroscopic ellipsometry which is based on analysis of changes in the state of polarization of light interacting with matter.

Our goal is to study advanced nanostructures by methods based on polarization optics and to contribute to the development of novel optical materials and devices. Our present research activities include studies of biological materials. We are especially interested in polarizing assemblies such as the Bouligand structure found in arthropods and stomatopods. We are also involved in biomimetic research where we fabricate photonic structures and meta-materials inspired by the studies of biological materials. We are using different techniques to realize the structures, in most cases thin film deposition by magnetron sputtering. In another project route is to explore the possibilities to use liquid crystal based optical elements for novel optical components including lenses with variable focal distance, switchable phase arrays and beam steering devices.

In our lab, The LiU Spectroscopic Ellipsometry Laboratory (The LiUSE-lab) we have a collection of excellent research grade instruments for optical polarization studies including a Mueller matrix dual rotating compensator ellipsometer (RC2, range: 210-1690 nm /0,7-5,9 eV), a Mueller matrix dual rotating compensator ellipsometer for in-situ use (RC2, range: 245-1690 nm /0,7-5,1 eV), a variable angle spectroscopic ellipsometer (VASE, range: 190-1690 nm / 0.7-6.5 eV) and an infrared variable angle spectroscopic ellipsometer (IR-VASE, range: 1.7-30 μm / 333-5900 1/cm). All instruments from J.A. Woollam Co. Together with our colleagues in the Terahertz Materials Analysis Center (THeMAC) we have ellipsometry equipment spanning a wavelength range from 190 nm to 3 mm.

Photo credit Olov Planthaber

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Publications

2026

Chih Yang Huang, Filip Gucmann, Anoop Kumar Singh, Po-Hsun Chen, Chien-Nan Hsiao, Edmund Dobrocka, Milan Tapajna, Igor Pis, Matej Micusik, Siddharth Rana, Dong-Sing Wuu, Po-Liang Liu, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng (2026) Nano-scale Al redistribution at grain boundaries governs growth morphology in ß-(AlxGa1-x)2O3 on sapphire substrate via MOCVD DISCOVER NANO, Vol. 21, Article 325 (Article in journal) https://dx.doi.org/10.1186/s11671-026-04753-w
Yu-Hsuan Hsu, Roger Magnusson, Rohini Sanikop, Shailesh Kalal, Justinas Palisaitis, Sagar Jathar, Katrin Pingen, Per Sandström, Issa Nseir, Arnaud le Febvrier, Urban Forsberg, Ray-Hua Horng, Kenneth Järrendahl, Per Eklund, Vanya Darakchieva, Jens Birch, Ching-Lien Hsiao (2026) Growth and optical properties of polar-, nonpolar, and semi-polar wurtzite ScGaN films Applied Physics Letters, Vol. 129, Article 031902 (Article in journal) https://dx.doi.org/10.1063/5.0325421
Hans Arwin, Stefan Schoeche, Arturo Mendoza-Galvan, Kenneth Järrendahl, James N. Hilfiker, Roger Magnusson (2026) Transmission ellipsometry, circular birefringence, and circular dichroism in the Mueller-matrix formalism AIP Advances, Vol. 16, Article 065115 (Article in journal) https://dx.doi.org/10.1063/5.0314738
Zhong-Lin Ye, Siddharth Rana, Sheng-Ti Chung, Irmantas Kasalynas, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng (2026) High-performance lateral ß-Ga2O3 Schottky barrier diodes enabled by (Al0.21Ga0.79)2O3/Ga2O3 heterostructure, sidewall electrodes, and dielectric field-plate engineering Results in Engineering (RINENG), Vol. 31, Article 111339 (Article in journal) https://dx.doi.org/10.1016/j.rineng.2026.111339
Chun-Chia Chang, Sheng-Ti Chung, Ching-Ho Tien, Siddharth Rana, Kenneth Järrendahl, Ching-Lien Hsiao, Yu-Chen Yang, Kun-Lin Lin, Irmantas Kasalynas, Ray-Hua Horng (2026) Enabled enhancement mode ß-Ga2O3 MOSFETs with high-? HfO2 gate dielectric and non-recess structure Materials Today Advances, Vol. 30, Article 100760 (Article in journal) https://dx.doi.org/10.1016/j.mtadv.2026.100760

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