Ingemar Persson

Publikationer

2025

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift) Vidare till DOI

2023

Ingemar Persson, Hugo Laval, Sylvain Chambon, Gwenael Bonfante, Kazuhiko Hirakawa, Guillaume Wantz, Benjamin Watts, Matthew A. A. Marcus, Xiaoxue Xu, Lei Ying, Girish Lakhwani, Mats R. R. Andersson, Julie M. M. Cairney, Natalie P. P. Holmes (2023) Sub-4 nm mapping of donor-acceptor organic semiconductor nanoparticle composition Nanoscale, Vol. 15, s. 6126-6142 (Artikel i tidskrift) Vidare till DOI

Hengfang Zhang, Ingemar Persson, Jr-Tai Chen, Alexis Papamichail, Dat Tran, Per O A Persson, Plamen P. Paskov, Vanya Darakchieva (2023) Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures Crystal Growth & Design, Vol. 23, s. 1049-1056 (Artikel i tidskrift) Vidare till DOI

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Plamen Paskov, Vanya Darakchieva (2023) High-quality N-polar GaN optimization by multi-step temperature growth process Journal of Crystal Growth, Vol. 603, Artikel 127002 (Artikel i tidskrift) Vidare till DOI

2022

Zhongcheng Yuan, Zhang-Jun Hu, Ingemar Persson, Chuan Fei Wang, Xianjie Liu, Chaoyang Kuang, Weidong Xu, Sai Bai, Feng Gao (2022) Interface-assisted cation exchange enables high-performance perovskiteLEDs with tunable near-infrared emissions Joule, Vol. 6, s. 2423-2436 (Artikel i tidskrift) Vidare till DOI