Ingemar Persson

Ingemar Persson, Hengfang Zhang, Alexis Papamichail, Plamen Paskov, Vanya Darakchieva (2026)

Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001) ACS Applied Electronic Materials, Vol. 8, s. 865-870 (Artikel i tidskrift)

Martin Ek, Soshan Cheong, Julie Cairney, Richard D. Tilley, Ingemar Persson (2026)

Using In Situ TEM to Understand the Surfaces of Electrocatalysts at Reaction Conditions: Single-Atoms to Nanoparticles Advanced Functional Materials, Vol. 36, Artikel e14614 (Artikel, forskningsöversikt)

Farhat Ikram, Soshan Cheong, Ingemar Persson, Zeno R. Ramadhan, Agus R. Poerwoprajitno, J. Justin Gooding, Richard D. Tilley (2025)

Iridium Nanocrystals Enriched with Defects and Atomic Steps to Enhance Oxygen Evolution Reaction Performance Journal of the American Chemical Society, Vol. 147, s. 10784-10790 (Artikel i tidskrift)

Arun Haridas Choolakkal, Ingemar Persson, Jarkko Etula, Emma Salmi, Taneli Juntunen, Per O A Persson, Jens Birch, Henrik Pedersen (2025)

Conformal chemical vapor deposition of B₄C thin films onto carbon nanotubes Nanoscale, Vol. 17, s. 5961-5971 (Artikel i tidskrift)

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025)

Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift)

Publikationer