Muhammad Nawaz

Publikationer

2023

Vallery Stanishev, Nerijus Armakavicius, Daniela Gogova-Petrova, Muhammad Nawaz, Niklas Rorsman, Plamen Paskov, Vanya Darakchieva (2023) Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition Vacuum, Vol. 217, Artikel 112481 (Artikel i tidskrift) https://dx.doi.org/10.1016/j.vacuum.2023.112481

2022

Rosalia Delgado Carrascon, Steffen Richter, Muhammad Nawaz, Plamen P. Paskov, Vanya Darakchieva (2022) Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies Crystal Growth & Design, Vol. 22, s. 7021-7030 (Artikel i tidskrift) https://dx.doi.org/10.1021/acs.cgd.2c00683

2021

Dat Tran, Rosalia Delgado Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov (2021) Correction: Erratum: "Phonon-boundary scattering and thermal transport in Al_xGa_1−xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)] Applied Physics Letters, Vol. 118, Artikel 189901 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0054625

Dat Tran, Rosalia Delgado Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen Paskov (2021) Correction: Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (vol 117, 252102, 2020) Applied Physics Letters, Vol. 118, Artikel 109902 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0045312

2020

Dat Tran, Rosalia Delgado Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov (2020) Phonon-boundary scattering and thermal transport in Al_xGa_1-xN: Effect of layer thickness Applied Physics Letters, Vol. 117, Artikel 252102 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0031404