Bo Monemar

Publikationer

2020

Mathias Schubert, Alyssa Mock, Rafał Korlacki, Sean Knight, Bo Monemar, Ken Goto, Yoshinao Kumagai, Akito Kuramata, Zbigniew Galazka, Günther Wagner, Marko J. Tadjer, Virginia D. Wheeler, Masataka Higashiwaki, Vanya Darakchieva (2020) Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry ß-Ga2O3 Gallium Oxide: Materials Properties, Crystal Growth, and Devices, s. 501-534 Vidare till DOI

2008

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Ivan Gueorguiev Ivanov, Bo Monemar, Lars Hultman, Erik Janzén (2008) Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4- SiC substrate 8th International Conference on Physics of Light-Matter Coupling in Nanostructures,2008

Galia Pozina, Carl Hemmingsson, Urban Forsberg, Anders Lundskog, Anelia Kakanakova-Georgieva, Bo Monemar, Lars Hultman, Erik Janzén (2008) Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate Journal of Applied Physics, Vol. 104, s. 113513- Vidare till DOI

2007

T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, Anelia Kakanakova-Georgieva, Erik Janzén, Daniela Gogova, Bo Monemar, M. Heuken (2007) All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN Journal of Crystal Growth, Vol. 300, s. 223-227 Vidare till DOI

2005

Anelia Kakanakova-Georgieva, A. Kasic, Christer Hallin, Bo Monemar, Erik Janzén (2005) Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system Phys. Stat. Sol. (c), Vol. 2, s. 960-963