Einar Sveinbjörnsson

Publikationer

2024

Arnar M. Vidarsson, Axel R. Persson, J. Tai Chen, Daniel Haasmann, Jawad ul-Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Sveinbjörnsson (2024) Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al₂O₃ Interfaces Solid State Phenomena, Vol. 358, s. 59-64 (Artikel i tidskrift) https://dx.doi.org/10.4028/p-8goxki

2023

Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Sveinbjörnsson, Ulrike Grossner, Peder Bergman, Lasse Vines, Jawad ul-Hassan (2023) The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers APL Materials, Vol. 11, Artikel 031107 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0142415

Arnar M. Vidarsson, Axel R. Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul-Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Sveinbjörnsson (2023) Observations of very fast electron traps at SiC/high-κ dielectric interfaces APL Materials, Vol. 11, Artikel 111121 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0160287

Arnar M. Vidarsson, Daniel Haasmann, Sima Dimitrijev, Einar Sveinbjörnsson (2023) Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation AIP Advances, Vol. 13, Artikel 055126 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0151589

2022

Arnar M. Vidarsson, Jordan R. Nicholls, Daniel Haasmann, Sima Dimitrijev, Einar Sveinbjörnsson (2022) Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods Journal of Applied Physics, Vol. 131, Artikel 215702 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0086974