Einar Sveinbjörnsson

Arnar M. Vidarsson, Jordan R. Nicholls, Daniel Haasmann, Sima Dimitrijev, Einar Sveinbjörnsson (2022) Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods Journal of Applied Physics, Vol. 131, Artikel 215702

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Alexis Papamichail, Anelia Kakanakova-Gueorguieva, Einar Sveinbjörnsson, Axel Persson, B. Hult, N. Rorsman, Vallery Stanishev, Son Phuong Le, Per O A Persson, M. Nawaz, Jr-Tai Chen, Plamen Paskov, Vanya Darakchieva (2022) Mg-doping and free-hole properties of hot-wall MOCVD GaN Journal of Applied Physics, Vol. 131

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Jordan R. Nicholls, Arnar M. Vidarsson, Daniel Haasmann, Einar Sveinbjörnsson, Sima Dimitrijev (2021) A method for characterizing near-interface traps in SiC metal-oxide-semiconductor capacitors from conductance-temperature spectroscopy measurements Journal of Applied Physics, Vol. 129

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Jordan R. Nicholls, Arnar M. Vidarsson, Daniel Haasmann, Einar Sveinbjörnsson, Sima Dimitrijev (2020) Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides IEEE Transactions on Electron Devices, Vol. 67, s. 3722-3728

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Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018, s. 460-464

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Einar Sveinbjörnsson

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Einar Sveinbjörnsson

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