2020 Jordan R. Nicholls, Arnar M. Vidarsson, Daniel Haasmann, Einar Sveinbjörnsson, Sima Dimitrijev (2020) Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides IEEE Transactions on Electron Devices , Vol. 67 , s. 3722-3728 Vidare till DOI 2019 Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Vidare till DOI Anna Malmros, Jr-Tai Chen, Hans Hjelmgren, Jun Lu, Lars Hultman, Olof Kordina, Einar Sveinbjörnsson, Herbert Zirath, Niklas Rorsman (2019) Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer IEEE Transactions on Electron Devices , Vol. 66 , s. 2910-2915 Vidare till DOI R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Vidare till DOI Robin Karhu, Einar Sveinbjörnsson, Bjorn Magnusson, Ivan Gueorguiev Ivanov, Örjan Danielsson, Jawad Ul-Hassan (2019) CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers Journal of Applied Physics , Vol. 125 Vidare till DOI
Jordan R. Nicholls, Arnar M. Vidarsson, Daniel Haasmann, Einar Sveinbjörnsson, Sima Dimitrijev (2020) Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides IEEE Transactions on Electron Devices , Vol. 67 , s. 3722-3728 Vidare till DOI
Rabia Y. Khosa, J. T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, Einar Ö. Sveinbjörnsson (2019) Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC Silicon Carbide and Related Materials 2018 , s. 460-464 Vidare till DOI
Anna Malmros, Jr-Tai Chen, Hans Hjelmgren, Jun Lu, Lars Hultman, Olof Kordina, Einar Sveinbjörnsson, Herbert Zirath, Niklas Rorsman (2019) Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer IEEE Transactions on Electron Devices , Vol. 66 , s. 2910-2915 Vidare till DOI
R. Y. Khosa, Jr-Tai Chen, M. Winters, K. Palsson, Robin Karhu, Jawad Ul-Hassan, N. Rorsman, Einar Sveinbjörnsson (2019) Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Materials Science in Semiconductor Processing , Vol. 98 , s. 55-58 Vidare till DOI
Robin Karhu, Einar Sveinbjörnsson, Bjorn Magnusson, Ivan Gueorguiev Ivanov, Örjan Danielsson, Jawad Ul-Hassan (2019) CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers Journal of Applied Physics , Vol. 125 Vidare till DOI