Sven Andersson
Teknisk chef, Enhetschef
Publikationer Visa/dölj innehåll
Mikhail Chubarov, Henrik Pedersen, Hans Högberg, Zsolt Czigany, Sven G. Andersson, Anne Henry
(2014)
Nucleation and initial growth of sp2-BNon α-Al2O3 and SiC by chemical vapour deposition
Anne Henry, Stefano Leone, Franziska Beyer, Henrik Pedersen, Olle Kordina, Sven Andersson, Erik Janzén
(2012)
SiC epitaxy growth using chloride-based CVD
Physica. B, Condensed matter
, Vol. 407
, s. 1467-1471
Vidare till DOI
Xun Li, Stefano Leone, Sven Andersson, Olle Kordina, Anne Henry, Erik Janzén
(2012)
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Materials Science Forum Vols 717 - 720
, s. 189-192
Vidare till DOI
Stefano Leone, Henrik Pedersen, Franziska Beyer, Sven Andersson, Olle Kordina, Anne Henry, Andrea Canino, Francesco La Via, Erik Janzén
(2012)
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Materials Science Forum Vols 717 - 720
, s. 113-116
Vidare till DOI
Stefano Leone, Yuan-Chih Lin, Franziska C. Beyer, Sven Andersson, Henrik Pedersen, Olle Kordina, Anne Henry, Erik Janzén
(2011)
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
Materials Science Forum Vols. 679-680 (2011) pp 59-62
, s. 59-62
Vidare till DOI