Alexis Papamichail

Publikationer

2026

Ingemar Persson, Hengfang Zhang, Alexis Papamichail, Plamen Paskov, Vanya Darakchieva (2026) Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001) ACS Applied Electronic Materials, Vol. 8, s. 865-870 (Artikel i tidskrift) https://dx.doi.org/10.1021/acsaelm.5c02115

2025

Mathias Schubert, Rafal Korlacki, Sina Khayam, Yousra Traouli, Preston Sorensen, Alexis Papamichail, Vanya Darakchieva (2025) Strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems: ß-(AlxGa1-x)2O3 on (h0l) ß-Ga2O3 as example Physical Review Applied, Vol. 24, Artikel 044075 (Artikel i tidskrift) https://dx.doi.org/10.1103/5gx2-kn6m

Minho Kim, Alexis Papamichail, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD Applied Physics Letters, Vol. 127, Artikel 032104 (Artikel i tidskrift) https://dx.doi.org/10.1063/5.0282836

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Denis Meledin, Erik Sundin, Mattias Thorsell, Alexis Papamichail, Vanya Darakchieva, Niklas Rorsman, Francois Joint, Victor Belitsky, Vincent Desmaris (2025) Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates IEEE Transactions on Electron Devices, Vol. 72, s. 4042-4048 (Artikel i tidskrift) https://dx.doi.org/10.1109/TED.2025.3581541

Hengfang Zhang, Jr-Tai Chen, Alexis Papamichail, Ingemar Persson, Dat Tran, Plamen Paskov, Vanya Darakchieva (2025) Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) Journal of Crystal Growth, Vol. 651, Artikel 127971 (Artikel i tidskrift) https://dx.doi.org/10.1016/j.jcrysgro.2024.127971