Danial Shafizadeh




Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Igor Abrikosov, Son Tien Nguyen, Ivan Gueorguiev Ivanov (2024) Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Physical Review B, Vol. 109, Artikel 235203 Vidare till DOI


Wisam Alshebly, Majid Shalchian, Danial Shafizadeh, Amirali Chalechale, Farzan Jazaeri (2023) Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement Solid-State Electronics, Vol. 200, Artikel 108544 Vidare till DOI


Joel Davidsson, Rohit Babar, Danial Shafizadeh, Ivan Gueorguiev Ivanov, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov (2022) Exhaustive characterization of modified Si vacancies in 4H-SiC Nanophotonics, Vol. 11, s. 4565-4580 Vidare till DOI
Son Tien Nguyen, Danial Shafizadeh, T. Ohshima, Ivan Gueorguiev Ivanov (2022) Modified divacancies in 4H-SiC Journal of Applied Physics, Vol. 132, Artikel 025703 Vidare till DOI


Danial Shafizadeh, Majid Shalchian, Farzan Jazaeri (2021) Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs Solid-State Electronics, Vol. 185, Artikel 108153 Vidare till DOI