2020 Henrik Pedersen, Lars Ojamäe, Örjan Danielsson (2020) Perspective-Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC ECS Journal of Solid State Science and Technology , Vol. 9 Vidare till DOI Örjan Danielsson, Matts Karlsson, Pitsiri Sukkaew, Henrik Pedersen, Lars Ojamäe (2020) A Systematic Method for Predictive In Silico Chemical Vapor Deposition The Journal of Physical Chemistry C , Vol. 124 , s. 7725-7736 Vidare till DOI 2019 Robin Karhu, Einar Sveinbjörnsson, Bjorn Magnusson, Ivan Gueorguiev Ivanov, Örjan Danielsson, Jawad Ul-Hassan (2019) CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers Journal of Applied Physics , Vol. 125 Vidare till DOI 2018 Pitsiri Sukkaew, Örjan Danielsson, Lars Ojamäe (2018) Growth Mechanism of SiC CVD: Surface Etching by H-2, H Atoms, and HCl Journal of Physical Chemistry A , Vol. 122 , s. 2503-2512 Vidare till DOI Pitsiri Sukkaew, Emil Kalered, Erik Janzén, Olle Kordina, Örjan Danielsson, Lars Ojamäe (2018) Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species The Journal of Physical Chemistry C , Vol. 122 , s. 648-661 Vidare till DOI
Henrik Pedersen, Lars Ojamäe, Örjan Danielsson (2020) Perspective-Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC ECS Journal of Solid State Science and Technology , Vol. 9 Vidare till DOI
Örjan Danielsson, Matts Karlsson, Pitsiri Sukkaew, Henrik Pedersen, Lars Ojamäe (2020) A Systematic Method for Predictive In Silico Chemical Vapor Deposition The Journal of Physical Chemistry C , Vol. 124 , s. 7725-7736 Vidare till DOI
Robin Karhu, Einar Sveinbjörnsson, Bjorn Magnusson, Ivan Gueorguiev Ivanov, Örjan Danielsson, Jawad Ul-Hassan (2019) CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers Journal of Applied Physics , Vol. 125 Vidare till DOI
Pitsiri Sukkaew, Örjan Danielsson, Lars Ojamäe (2018) Growth Mechanism of SiC CVD: Surface Etching by H-2, H Atoms, and HCl Journal of Physical Chemistry A , Vol. 122 , s. 2503-2512 Vidare till DOI
Pitsiri Sukkaew, Emil Kalered, Erik Janzén, Olle Kordina, Örjan Danielsson, Lars Ojamäe (2018) Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species The Journal of Physical Chemistry C , Vol. 122 , s. 648-661 Vidare till DOI